Non-polymeric organic particles for chemical mechanical planarization
View Patent ↗An abrasive composition comprising non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The inventive compositions preferably comprise soft water in combination with 0.001–20 w/w % of non-polymeric organic particles, 0.1–10 w/w % of an oxidizing agent, 0.05–10 w/w % of a chelating agent, 0.01–10 w/w % of a surfactant, and 0–10 w/w % of a passivation agent at a pH in the range of 2–12, wherein said percentages are w/w (weight/weight) percentages, based on the total weight of said compositions. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.
1. A chemical mechanical planarization abrasive composition, which comprises non-polymeric organic particles in a concentration of 0.001–20 w/w % as an abrasive material, 0.1–10 w/w % of an oxidizing agent, 0.05–10 w/w % of a chelating agent, 0.01–10 w/w % of a surfactant, 0–10 w/w % of a passivation agent and soft water in the form of a slurry, wherein the non-polymeric organic particles have an average particle size of less than 1 μm.
2. The abrasive composition according to claim 1 , wherein the non-polymeric organic particles consist essentially of at least one compound selected from the group consisting of melamine and a derivative thereof.
3. The abrasive composition according to claim 1 , wherein the non-polymeric organic particles contain at least one functional group selected from the group consisting of amino, amido and metal salt thereof.
4. The abrasive composition according to claim 1 , wherein essentially all of said particles have a size distribution between +75% and −75% of the average particle size.
5. The abrasive composition according to claim 1 , wherein the slurry has a pH in the range of 2–12.
6. The abrasive composition according to claim 1 , wherein the oxidizing agent is at least one selected from the group consisting of peroxide, chlorate, chlorite, perchiorate, bromate, bromite, perbromate, nitrate, persulfate, iodate, permanganate and hypochlorite.
7. The abrasive composition according to claim 1 , wherein H 2 O 2 is the oxidizing agent and is present in an amount of 0.1–6% w/w.
8. The abrasive composition according to claim 1 , further comprising a complexing agent which is at least one selected from the group consisting of polyamine, polyaminocarboxylic acid and an amino acid.
9. The abrasive composition according to claim 8 , wherein the complexing agent is an amino acid.
10. The abrasive composition according to claim 1 , wherein the surfactant is a nonionic surfactant.
11. The abrasive composition according to claim 1 , wherein the surfactant is at least one selected from the group consisting of an alkylated polyethylene oxide, an alkylated cellulose, an alkylated polyvinyl alcohol, an alkyl carboxylic acid, an aryl carboxylic acid, a sulfate salt and an ammonium salt.
12. The abrasive composition according to claim 1 , wherein the slurry further comprises at least one of inorganic abrasive particles and polymeric abrasive particles.
13. The abrasive composition according to claim 12 , wherein the slurry further comprises polymeric abrasive particles and said polymeric abrasive particles are formed by combining a substituted or unsubstituted formaldehyde, and at least one of (a) a substituted or unsubstituted melamine, (b) a substituted or unsubstituted urea, (c) a substituted or unsubstituted phenol and (d) a substituted or unsubstituted resorcinol.
14. The abrasive composition according to claim 12 , wherein the slurry further comprises inorganic abrasive particles which are at least one selected from the group consisting of SiO 2 , Al 2 O 3 , ZrO 2 , CeO 2 , SiC, Fe 2 O 3 , TiO 2 , Si 3 N 4 and diamond.
15. The abrasive composition according to claim 1 , wherein the passivation agent is at least one selected from the group consisting of benzotriazole, benzothiazole, 1 H-benzotriazoleacetonitrile, benzotriazole-5-carboxylic acid, 2(3H)-benzothiazolone, and 1 H-benzotriazole-1-methanol.
16. A chemical mechanical planarization process, which comprises:
planarizing a surface of a semiconductor with a chemical mechanical planarization abrasive slurry composition which comprises non-polymeric organic particles as an abrasive material, 0.1–10 w/w % of an oxidizing agent and a solvent.
17. The chemical mechanical planarization process of claim 16 , wherein the solvent is soft water, the non-polymeric organic particles are present in a concentration of 0.001–20 w/w %, and the slurry further comprises 0.05–10 w/w % of a chelating agent, 0.01–10 w/w % of a surfactant, and 0–10 w/w % of a passivation agent.
18. The chemical mechanical planarization process of claim 16 , wherein the composition of the surface of the semiconductor comprises copper and the slurry further comprises inorganic abrasive particles.
19. The chemical mechanical planarization process of claim 16 , further comprising a preliminary step of reducing the size of the abrasive non-polymeric organic particles in the presence of an anionic surfactant prior to combining the abrasive non-polymeric organic particles in the chemical mechanical planarization abrasive slurry composition.