Liquid crystal display device comprising a refraction layer formed between one of the data and gate bus lines and the pixel electrode and method of fabricating the same
View Patent ↗A method of fabricating a liquid crystal display device includes forming a gate electrode and a gate bus line on a transparent lower substrate, forming an insulating layer on the gate electrode and gate bus line, forming an active layer on the insulating layer, forming a source electrode, a drain electrode and a data bus line, forming a passivation layer on the transparent lower substrate, forming a refraction layer on the passivation layer, and forming a pixel electrode on a surface of the refraction layer.
1. A method of fabricating a liquid crystal display device, comprising the steps of:
forming a gate electrode and a gate bus line on a transparent lower substrate;
forming an insulating layer on the gate electrode and gate bus line;
forming an active layer on the insulating layer;
forming a source electrode, a drain electrode and a data bus line;
forming a passivation layer on the transparent lower substrate;
forming a refraction layer on the passivation layer; and
forming a pixel electrode on a surface of the refraction layer;
wherein the refraction layer is formed between one of the data and gate bus lines and the pixel electrode, and both peripheral portions of the refraction layer overlap a portion of one of the data and gate bus lines and a portion of the pixel electrode; and
wherein the refraction layer refracts and transmits substantially all of the light incident in a direction from the lower substrate towards an upper substrate so that light incident between one of the data and gate bus lines and the pixel electrode is blocked by a black matrix formed to overlap a peripheral portion of the pixel electrode and to correspond to the gate line and the data line.
2. The method according to claim 1 , wherein the refraction layer includes at least one of a TiO x -based metal oxide ad a SrTi 3 -based metal oxide.
3. The method according to claim 1 , wherein the refraction layer has a first refraction index, the passivation layer has a second refraction index, and the insulating layer has a third refraction index, wherein the first refraction index is larger than the second and third refraction indexes.
4. The method according to claim 1 , wherein the refraction layer has a refraction index within a range of about 2-5.
5. A method of fabricating a liquid crystal display device, comprising the steps of:
forming a gate electrode and a gate bus line on a transparent lower substrate;
forming a gate insulating layer on the gate electrode and gate bus line;
forming an active layer on the insulating layer;
forming a source electrode, a drain electrode and a data bus line on the active layer;
forming a passivation layer on the transparent lower substrate;
forming a metal oxide film on the passivation layer;
forming a refraction layer by removing a portion of the metal oxide film; and
forming a pixel electrode on the passivation layer and the refraction layer, wherein the refraction layer is formed between one of the data and gate bus lines and the pixel electrode, and both peripheral portions of the refraction layer overlap a portion of one of the data and gate bus lines and a portion of the pixel electrode;
wherein the refraction layer refracts and transmits substantially all of the light incident in a direction from the lower substrate towards an upper substrate so that light incident between one of the data and gate bus lines and the pixel electrode is blocked by a black matrix formed to overlap a peripheral portion of the pixel electrode and to correspond to the gate line and the data line.
6. The method according to claim 5 , wherein the metal oxide film includes at least one of a TiO x -based metal oxide ad a SrTi 3 -based metal oxide.
7. The method according to claim 5 , wherein a peripheral portion of the pixel electrode overlaps the refraction layer.
8. The method according to claim 7 , wherein a region where peripheral portion of the pixel electrode overlaps the refraction layer corresponds to a black matrix formed on a transparent upper substrate.
9. The method according to claim 5 , wherein the refraction layer has a refraction index that is larger than refraction indexes of the passivation layer and the insulating layer.
10. The method according to claim 5 , wherein the metal oxide film has a refraction index within a range of about 2-5.
11. The method according to claim 5 , wherein the step of forming a refraction layer includes etching the metal oxide film using a half-tone pattern.
12. The method according to claim 5 , wherein the step of forming a refraction layer includes forming a plurality of contact holes to exposed portions of gate and data pads.
13. A liquid crystal display device, comprising:
an upper substrate having a black matrix; and
a lower substrate having a thin film transistor, a data bus line, a gate bus line, a passivation layer, and a refraction layer formed on the passivation layer;
a pixel electrode formed on the refraction layer;
wherein a refraction index of the refraction layer is larger than refraction index of the passivation layer; and
wherein the refraction layer is formed between one of the data and gate bus lines and the pixel electrode, and both peripheral portions of the refraction layer overlap a portion of one of the data and gate bus lines and a portion of the pixel electrode;
wherein the refraction layer refracts and transmits substantially all of the light incident in a direction from the lower substrate towards an upper substrate so that light incident between one of the data and gate bus lines and the pixel electrode is blocked by a black matrix formed to overlap a peripheral portion of the pixel electrode and to correspond to the gate line and the data line.
14. The device according to claim 13 , wherein the refraction layer is formed between a central portion of the black matrix and a peripheral portion of the data bus line.
15. The device according to claim 13 , wherein the refraction layer has a refraction index within a rage of about 2-5.
16. The device according to claim 13 , wherein a peripheral portion of the refraction layer contacts a lower peripheral portion of the pixel electrode.
17. The device according to claim 13 , wherein the refraction layer includes at least one of a TiO x -based metal oxide ad a SrTi 3 -based metal oxide.
18. The device according to claim 13 , wherein the refraction layer refracts light incident between the data bus line and the pixel electrode.
19. The device according to claim 13 , wherein the thin film transistor includes a gate insulating film, wherein the refraction index of the refraction layer is larger than a refraction index of the gate insulating layer.
20. A thin film transistor array substrate of a liquid crystal display device, comprising:
a passivation layer overlying a thin film transistor and a data bus line; and
a refraction layer formed on the passivation layer,
wherein a refraction index of the refraction layer is larger than refraction index of the passivation layer; and
wherein the refraction layer is formed between one of the data bus line and a gate bus line and a pixel electrode, and both peripheral portions of the refraction layer overlap a portion of one of the data and gate bus lines and a portion of the pixel electrode;
wherein the refraction layer refracts and transmits substantially all of the light incident in a direction from the lower substrate towards an upper substrate so that light incident between one of the data and gate bus lines and the pixel electrode is blocked by a black matrix formed to overlap a peripheral portion of the pixel electrode and to correspond to the gate line and the data line.