Thin film transistor array panel and liquid crystal display including the panel
View Patent ↗A gate wire including a gate line and a gate electrode is formed on an insulating substrate of a TFT array panel. A semiconductor pattern made of amorphous silicon is formed on the gate insulating layer covering the gate wire. A data wire including a data line, a source electrode, and a drain electrode is formed on the semiconductor pattern or the gate insulating layer covering the gate wire. A part of the semiconductor pattern extends under the data line, and a light blocking member overlapping the semiconductor pattern under the data line is formed using the same layer as the gate wire. The light blocking member is to prevent light incident upon the substrate from a backlight from entering the amorphous silicon layers; therefore, the stripes of different brightness and waterfall phenomenon in which the stripes move up and down can be removed in an LCD using a backlight driven by a rectangular wave of ON/OFF signals outputted from inverter.
1. A thin film transistor array panel comprising:
an insulating substrate;
a gate wire formed on the substrate and including a gate line and a gate electrode connected to the gate line;
a gate insulating layer formed on the gate wire;
a data wire including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode with reference to the gate electrode;
a semiconductor pattern formed on the gate insulating layer and including a first portion located under the data line between two neighboring gate wires and a second portion located under the source electrode and the drian electrode;
a light blocking member overlapping the first portion of the semiconductor pattern, wherein the light blocking member is formed of the same layer as the gate wire and separate from the gate wire; and
a pixel electrode electrically connected to the drain electrode, wherein a width of the light blocking member is smaller than a width of the data wire and a width of the light blocking member overlapping the first portion of the semiconductor pattern is equal to or larger than a width of the first portion of the semiconductor pattern.
2. The thin film transistor array panel of claim 1 , wherein the semiconductor pattern has substantially the same planar shape as the data wire except for a channel portion located between the source electrode and the drain electrode.
3. The thin film transistor array panel of claim 2 , wherein a part of the semiconductor pattern stretches out from an edge of the data wire.
4. The thin film transistor array panel of claim 1 , wherein the data wire includes a lower layer and an upper layer formed on the lower layer and having a different shape from the lower layer.
5. A liquid crystal display comprising:
a first panel including:
an insulating substrate;
a gate wire formed on the substrate and including a gate line and a gate electrode connected to the gate line;
a gate insulating layer formed on the gate wire;
a data wire including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode with reference to the gate electrode;
a semiconductor pattern formed on the gate insulating layer and including a first portion located under the data line between two neighboring gate wires and a second portion located under the source electrode and the drain electrode;
a light blocking member overlapping the first portion of the semiconductor pattern, wherein the light blocking member is formed of the same layer as the gate wire and separate from the gate wire, a width of the light blocking member is smaller than a width of the data wire, and a width of the light blocking member overlapping the first portion of the semiconductor pattern is equal to or larger than a width of the first portion of the semiconductor pattern; and
a pixel electrode electrically connected to the drain electrode;
a second panel facing the first panel; and
a backlight for emitting light incident on the first panel from a side opposite the second panel with respect to the first panel, wherein the backlight is periodically turned on and off.
6. The thin film transistor array panel of claim 1 , wherein the light blocking member is a-multi-layered structure comprising at least two layers of different conductive materials.
7. The thin film transistor array panel of claim 6 , wherein the different conductive materials include Al and Cr.
8. The thin film transistor array panel of claim 6 , wherein the multi-layered structure has tapered sidewalls.
9. The thin film transistor array panel of claim 8 , wherein the tapered sidewalls have an angle of inclination about 60 degrees to about 80 degrees.
10. The thin film transistor array panel of claim 5 , wherein the light blocking member is a-multi-layered structure comprising at least two layers of different conductive materials.
11. The thin film transistor array panel of claim 10 , wherein the different conductive materials include Al and Cr.
12. The thin film transistor array panel of claim 10 , wherein the multi-layered structure has tapered sidewalls.
13. The thin film transistor array panel of claim 12 , wherein the tapered sidewalls have an angle of inclination about 60 degrees to about 80 degrees.