Optoelectronic component with an adjustable optical property and method for producing the layer structure
View Patent ↗The invention relates to an optoelectronic component and a method for producing it, in particular a waveguide structure, featuring at least one irradiation-sensitive structure in a layer structure of the optoelectronic component, the refractive index of the irradiation-sensitive structure being able to be permanently altered in a manner dependent on an irradiation. It is thus possible to change the properties of at least one layer, in particular of an optical waveguide, in a targeted manner by means of a simple method step.
1. An optoelectronic component with a layer structure, the optoelectronic component comprising:
at least one irradiation-sensitive structure in the layer structure having a first refractive index that is able to be permanently altered by irradiation comprising a particle radiation to a second refractive index, and at least one non-irradiation sensitive layer being arranged above the irradiation-sensitive structure, wherein the layer structure in which the irradiation-sensitive structure is embedded comprises SiO 2 , SiO 2 -B 2 O 3 or SiO 2- B 2 O 3- P 2 O 5 ;
wherein the second refractive index substantially matches a third refractive index of a particular layer in the layer structure and wherein the at least one irradiation-sensitive structure forms part of a vertical coupler such that light couples between the particular layer and the at least one irradiation-sensitive structure.
2. The optoelectronic component of claim 1 , wherein the irradiation-sensitive structure comprises a doping made of germanium oxide.
3. The optoelectronic component of claim 1 , wherein the irradiation-sensitive structure comprises a doping made of hydrogen.
4. The optoelectronic component of claim 1 , wherein the irradiation-sensitive structure comprises a doping, wherein the doping comprises
a) germanium oxide and hydrogen,
b) tin oxide,
c) tin oxide and germanium oxide, or
d) germanium oxide.
5. The optoelectronic component of claim 1 , wherein the irradiation-sensitive structure is arranged in a core layer of a waveguide structure.
6. The optoelectronic component of claim 1 , wherein the irradiation-sensitive structure is arranged in a buffer layer or a covering layer of a waveguide structure.
7. The optoelectronic component of claim 1 , wherein the irradiation-sensitive structure is arranged over the whole area in a layer or locally in a layer as a grating structure.
8. The optoelectronic component of claim 1 , wherein the optoelectronic component is a vertical coupler or a laser diode.
9. The optoelectronic component of claim 1 , wherein the irradiation-sensitive structure is part of one of a plurality of SiO 2 layers with different layer dopings.
10. A method for producing an optoelectronic semiconductor component, the method comprising:
a) applying an irradiation-sensitive structure to a layer of a layer structure or to a substrate, wherein the layer or the substrate to which the irradiation-sensitive structure is applied includes one or more of SiO 2 , SiO 2 -B 2 O 3 or SiO 2- B 2 O 3- P 2 O 5 ;
b) irradiating the irradiation-sensitive structure in order to permanently alter a refractive index of the irradiation-sensitive structure in a targeted manner such that the refractive index of the irradiation-sensitive structure is the same as a refractive index of a particular layer of the layer structure; and
c) depositing a non-irradiation sensitive layer above the irradiation-sensitive structure, wherein the irradiation-sensitive structure forms a vertical coupler with respect to the particular layer.
11. The method of claim 10 , wherein irradiation includes particle radiation comprising an ion radiation, an electron radiation, or a neutron radiation.
12. An optoelectronic component, comprising:
a substrate;
a buffer layer positioned above the substrate;
a core layer positioned above the buffer layer;
a covering layer positioned above the core layer; and
an irradiation sensitive structure disposed a particular distance from the core layer, wherein a refractive index of the irradiation sensitive structure after irradiation matches a refractive index of the core layer to form a vertical coupler.
13. The optoelectronic component as recited in claim 12 , wherein the optoelectronic component comprises a laser diode, wherein the irradiation sensitive structure comprises dimensions that substantially the same dimensions as the core layer and wherein light coupled out is provided to a monitor diode that is used to measure a power of the light.
14. The optoelectronic component as recited in claim 12 , wherein the core layer comprises SiO 2 , SiO 2 -B 2 O 3 or SiO 2- B 2 O 3- P 2 O 5 .
15. The optoelectronic component as recited in claim 12 , wherein the irradiation-sensitive structure comprises a doping, wherein the doping comprises:
a) germanium oxide and hydrogen,
b) tin oxide,
c) tin oxide and germanium oxide, or
d) germanium oxide.
16. The optoelectronic component as recited in claim 12 , wherein the irradiation-sensitive structure is sensitive to at least one of: ion radiation; electron radiation; and neutron radiation.
17. The optoelectronic component as recited in claim 12 , wherein the irradiation-sensitive structure comprises a grating.