Dual panel type organic electroluminescent display device and manufacturing method for the same

1. An organic electroluminescent display (ELD) device having a first substrate having an array element layer and a second substrate having an organic electroluminescent diode, comprising:

a gate line formed on the first substrate in a first direction;

a data line formed on the first substrate in a second direction perpendicular to the first direction;

a power supply line spaced apart from the data line and formed on the first substrate in the second direction, the power supply line being formed with same material as the gate line in a same process as the gate line, the power supply line having an additional power supply link line near a crossing portion of the gate line and the power supply line;

a switching thin film transistor formed near a crossing portion of the gate and data lines, the switching thin film transistor having a semiconductor layer formed of amorphous silicon;

a driving thin film transistor formed near a crossing portion of the switching thin film transistor and the power supply line, the driving thin film transistor having a semiconductor layer formed of same material as the semiconductor layer of the switching thin film transistor;

a connecting electrode connected to the driving thin film transistor; and

an electrical connecting pattern formed between the first substrate and the second substrate for electrically connecting the connecting electrode to the organic electroluminescent diode.

2. The device according to claim 1 , further comprising a gate pad, a data pad and a power supply pad disposed at one ends of the gate line, the data line and the power supply line, respectively.

3. The device according to claim 2 , further comprising a first gate pad electrode on the gate pad and first power supply pad electrode on the power supply pad, wherein the first gate pad electrode and the first power supply pad electrode are formed with same material as the data line in a same process as the data line.

4. The device according to claim 3 , further comprising a data pad electrode on the data pad, a second gate pad electrode on the first gate pad electrode and a second power supply pad electrode on the first power supply pad electrode, wherein the data pad electrode, the second gate pad electrode and the second power supply pad electrode are formed with same material as the connecting electrode in a same process as the connecting electrode.

5. The device according to claim 1 , wherein the switching thin film transistor has a gate electrode, a semiconductor layer, a source electrode and a drain electrode, the gate electrode being extended from the gate line, the semiconductor layer being formed over the gate electrode and having an active layer formed of amorphous silicon and an ohmic contact layer formed of impurity-doped amorphous silicon, the source and drain electrodes being formed on the semiconductor layer and spaced apart from each other, and wherein the driving thin film transistor has a driving gate electrode, a driving semiconductor layer, a driving source electrode and a driving drain electrode, the driving gate electrode being connected to the drain electrode, the driving semiconductor layer being formed over the driving gate electrode, the driving source and drain electrodes being formed on the driving semiconductor layer and spaced apart from each other.

6. The device according to claim 5 , further comprising a power electrode between the driving source electrode and the power supply line, wherein the power electrode is formed with same material as the connecting electrode in a same process as the connecting electrode and connected to the driving source electrode and the power supply line.

7. The device according to claim 1 , wherein the power supply link line is formed with the same material as the data line in a same process as the data line.