Current sensing for power MOSFET operable in linear and saturated regions

1. A circuit for sensing the current through a power MOSFET in both the linear and saturated regions of operation of the power MOSFET comprising:

a first circuit coupled to the power MOSFET for sensing the current through the power MOSFET in the saturated region of operation of the power MOSFET; and

a second circuit coupled to the power MOSFET for sensing the current through the MOSFET in the MOSFET's linear region of operation,

wherein the second circuit comprises a resistance coupled in series with the current sense cell, and a current mirror coupled to the resistance providing a current mirror output, whereby a current provided by the current mirror output is proportional to the current through the current sense cell, and further comprising an amplifier coupled to the current mirror output and coupled to a reference voltage, the amplifier producing an output proportional to the current from the current mirror and proportional to the current in the main cell of the power MOSFET.

2. The circuit of claim 1 wherein the first circuit is responsive to a drain-source voltage of the power MOSFET of a certain voltage or less and the second circuit is responsive to a drain-source voltage of the power MOSFET of the certain voltage or greater.

3. The circuit of claim 2 , wherein the certain voltage is approximately 3–4 volts.

4. The circuit of claim 2 , wherein the power MOSFET includes a main cell for passage of load current and a current sense cell and wherein the first circuit comprises an amplifier coupled to the main cell and to the current sense cell and having first and second power supplies whereby the first circuit is responsive to power MOSFET drain source voltages less than or equal to the certain voltage, the amplifier providing an output across a resistance whereby the voltage across the resistance is proportional to the current in the power MOSFET main cell.

5. The circuit of claim 4 , wherein the output of the amplifier of the first circuit is connected to the control electrode of a further transistor whose main electrodes are connected in series with the resistance.

6. The circuit of claim 5 , wherein the amplifier of the first circuit drives the further transistor so that a voltage drop across the current sense cell is equal to the voltage drop across the main cell of the power MOSFET.

7. The circuit of claim 4 , wherein the first circuit amplifier is biased so as to provide an output when the drain-source voltage of the power MOSFET is below a certain level and ceases to provide an output when the drain-source voltage is above the certain level, and the second circuit amplifier operates to provide an output when the drain source voltage is above the certain level and ceases to provide an output when the drain -source voltage is below the certain level.

8. The circuit of claim 1 , wherein the amplifier of the second circuit is coupled to a further transistor, the further transistor being coupled in series with a resistance across which a voltage proportional to the current through the main cell of the power MOSFET is developed.

9. The circuit of claim 1 , wherein the second circuit further comprises first and second transistors having their control electrodes coupled to the output of the amplifier of the second circuit, the first of the transistors being coupled to the current mirror for providing a feedback signal to the amplifier and wherein the second transistor is coupled to a resistance across which a voltage proportional to the current in the main cell of the power MOSFET is developed.

10. The circuit of claim 9 , wherein the second transistor is coupled to the resistance in open loop.

11. The circuit of claim 9 , wherein the ratio of currents in the first and second transistors is preset.