Transreflection-type liquid crystal display device and method of fabricating the same

1. A method for fabricating a transreflection-type liquid crystal display (LCD) device, comprising:

forming a gate line and a storage line on a substrate using a first mask;

forming a gate insulating layer on the substrate;

forming a data line and a thin film transistor having source and drain electrodes using a second mask by depositing a semiconductor layer and a metal layer on the substrate including the gate line and the storage line, the data line being perpendicular to the gate line to define a pixel region;

forming a negative-type organic insulating layer having at least one of concave and convex patterns therein using a third mask, the concave and convex patterns formed within the pixel region except for a transmission part;

forming a reflective electrode on the negative-type organic insulating layer formed within the pixel region except for the transmission part, using a fourth mask;

forming a contact hole on a drain electrode using a fifth mask; and

forming a transparent electrode within the pixel region using a sixth mask to be connected with the drain electrode through the contact hole.

2. The method according to claim 1 , wherein the thin film transistor includes a U-shaped channel region.

3. The method according to claim 1 , further comprising:

forming a gate pad at one end portion of the gate line during forming of the gate line;

forming a data pad at one end portion of the data line during forming of the data line;

forming a contact hole in each of the gate pad and the data pad during forming of the contact hole in the drain electrode; and

forming a pad terminal in each of the gate pad and the data pad using a same material as the transparent electrode during forming of the transparent electrode.

4. The method according to claim 1 , wherein the forming of the data line and the thin film transistor includes:

depositing a photo-resist layer on the metal layer;

patterning the photo-resist layer during a diffraction exposure using a second mask to reduce a thickness portion of the photo-resist layer corresponding to the channel region of the thin film transistor;

etching the semiconductor layer and the metal layer by using the patterned photo-resist layer as a mask;

ashing the photo-resist layer to remove the portion corresponding to the channel region; and

etching the metal layer using the photo-resist layer as a mask.

5. The method according to claim 1 , wherein the negative-type organic insulating layer includes a negative-type photoacryl.

6. The method according to claim 1 , wherein the concave and convex patterns of the negative-type organic insulating layer are using a stamping process.

7. The method according to claim 1 , further comprising hardening the negative-type organic insulating layer using UV light.

8. The method according to claim 1 , further comprising re-curing the negative-type organic insulating layer.

9. The method according to claim 8 , wherein the re-curing process is performed at a temperature between about 160° C. and about 240° C. during a period of about 40 to about 80 minutes.

10. The method according to claim 1 , further comprising forming a passivation layer between the reflective electrode and the transparent electrode.

11. The method according to claim 10 , wherein the passivation layer includes one of SiO x and SiN x .

12. The method according to claim 10 , wherein the passivation layer is formed at a temperature between about 180° C. and about 220° C.