CMOS image sensor and method for manufacturing the same
View Patent ↗A CMOS image sensor and a manufacturing method thereof, wherein the gates of several transistors of the CMOS image sensor are formed in an active region defined by an isolation region for a unit pixel of the CMOS image sensor, and a passivation layer composed of insulating layer is formed on the semiconductor substrate. Impurities are ion-implanted into the active region to form one or more diffusion regions of a photo diode of the CMOS image sensor, wherein the passivation layer prevents a boundary portion of the active region from being ion-implanted. Thus, damages by ion implantation at the boundary portion between the diffusion region for the photo diode and the isolation region are prevented, and the dark current of the CMOS image sensor is reduced.
1. A method for manufacturing a CMOS image sensor, comprising:
forming an isolation region in a semiconductor substrate to define an active region for a unit pixel of the CMOS image sensor;
forming a gate electrode on said semiconductor substrate;
forming a passivation layer on the isolation region and a boundary region between said isolation region and said active region;
forming a masking layer to expose a portion of the active region over the semiconductor substrate; and
performing an ion implantation of impurities using said passivation layer and said masking layer as an ion implantation mask for forming a diffusion region of a photo diode in a portion of the active region, wherein said diffusion region is formed spaced apart from said isolation region.
2. The method for manufacturing a CMOS image sensor as claimed in claim 1 , wherein said boundary region is formed to have a width of about 50 micrometers.
3. A method for manufacturing a CMOS image sensor, comprising:
forming an isolation region in a semiconductor substrate to define an active region for a unit pixel of the CMOS image sensor;
forming a passivation layer over a boundary between the isolation region and the active region;
forming a mask layer on the isolation region and a portion of the passivation layer; and
performing an ion implantation of impurities for forming a diffusion region for a photo diode in a portion of the active region, wherein said diffusion region is formed spaced apart from said isolation region.
4. The method for manufacturing a CMOS image sensor as claimed in claim 3 , wherein said passivation layer is composed of an insulating layer.
5. The method for manufacturing a CMOS image sensor as claimed in claim 3 , wherein said passivation layer is composed of any one of a single layer of an oxide layer and a single layer of a nitride layer.
6. The method for manufacturing a CMOS image sensor as claimed in claim 3 , wherein said passivation layer is composed of multi layers of at least one oxide layer and at least one nitride layer.
7. The method for manufacturing a CMOS image sensor as claimed in claim 3 , wherein said mask layer is a photoresist layer.
8. The method for manufacturing a CMOS image sensor as claimed in claim 3 , wherein said semiconductor substrate is a p ++ type silicon substrate having a P 31 type epitaxial layer formed thereon, and the diffusion region for said photo diode has an n − type diffusion region.
9. The method for manufacturing a CMOS image sensor as claimed in claim 8 , wherein a P o type diffusion region is formed in said n − type diffusion region of the photo diode so as to reduce dark current generated on the surface of said semiconductor substrate.