Reflective LCD device having the first photo-acryl layer being out of direct contact with the data line and method for manufacturing the same

1. A liquid crystal display (LCD) device comprising:

a thin film transistor on a substrate, a data line being connected to a source region of the thin film transistor;

an insulating layer on an entire surface of the substrate including the thin film transistor;

a first photo-acryl layer on the insulating layer, the first photo-acryl layer being out of direct contact with the data line;

a plurality of protrusions being formed on the first photo-acryl layer at fixed intervals, wherein the protrusions are formed of a second photo-acryl layer; and

a reflective electrode being formed on the first photo-acryl layer, said reflective electrode being capable of being connected to a predetermined portion of the thin film transistor.

2. The LCD device according to claim 1 , wherein each of said protrusions has a height and a radius at a ratio of 1 to 10.

3. The LCD device according to claim 1 , wherein the first photo-acryl layer is thicker than the second photo-acryl layer.

4. The LCD device according to claim 1 , wherein a curved surface reflexibility of each of said protrusions has trapezoidal reflection characteristics.

5. A method for manufacturing a liquid crystal display (LCD) device comprising:

forming a thin film transistor on a substrate;

forming a data line connected to a source region of the thin film transistor;

forming an insulating layer on the substrate;

forming a first photo-acryl layer on the insulating layer to be out of direct contact with the data line;

performing a hard-cure process on the first photo-acryl layer;

forming a plurality of second photo-acryl patterns on the first photo-acryl layer at fixed intervals;

forming a plurality of protrusions by reflowing the second photo-acryl patterns; and

forming a reflective electrode on an entire surface including the protrusions.

6. The method according to claim 5 , wherein the insulating layer is formed of an organic insulating layer.

7. The method according to claim 5 , wherein the insulating layer is formed of any one of the group consisting of polyimide, BCB, an oxide layer and a nitride layer.

8. The method according to claim 5 , wherein the first photo-acryl layer is thicker than the second photo-acryl layer.

9. The method according to claim 5 , wherein the first photo-acryl layer is formed at a thickness between 2 μm and 3 μm.

10. The method according to claim 5 , wherein the second photo-acryl layer is formed at a thickness between 0.5 μm and 0.8 μm.

11. The method according to claim 5 , furthering comprising performing a melt-bake process on the second photo-acryl patterns at a temperature between 110° C. and 160° C. so as to form the protrusions.

12. The method according to claim 5 , wherein the reflective electrode is formed of any one of the group consisting of Al, Ag, MoW, Al—Nd alloy and a Cr layer.

13. The method according to claim 5 , further comprising controlling the curvature of the protrusions to achieve reflexibiltiy having trapezoidal reflection characteristics.

14. A method for manufacturing a liquid crystal display (LCD) device comprising:

forming a thin film transistor on the substrate;

forming a data line connected to a source region of the thin film transistor

forming a first insulating layer on an entire surface of the substrate including the thin film transistor;

forming a first photo-acryl layer on the first insulating layer to be out of direct contact with the data line;

performing a hard-cure process on the first photo-acryl layer;

forming a plurality of second photo-acryl patterns on the first photo-acryl layer at fixed intervals;

forming a plurality of protrusions by reflowing the second photo-acryl patterns;

forming a reflective electrode on a predetermined portion of the first photo-acryl layer including the plurality of protrusions;

forming a second insulating layer on an entire surface of the substrate including the reflective electrode;

forming a contact hole exposing a predetermined portion of the thin film transistor by selectively removing the second insulating layer, the first photo-acryl layer and the first insulating layer; and

forming a transparent electrode being electrically connected with the thin film transistor through the contact hole.

15. The method according to claim 14 , wherein the first and second insulating layers are formed of the same insulating layer.

16. The method according to claim 14 , wherein the first and second insulating layers are formed of any one of the group consisting of polyimide, BCB, an oxide layer and a nitride layer.

17. The method according to claim 14 , wherein the first insulating layer is formed at a thickness between 1 μm and 5 μm.

18. The method according to claim 14 , wherein the transparent electrode is formed of any one of the group consisting of Indium-Tin-Oxide (ITO), Indium-Zinc Oxide (IZO) and Indium-Tin-Zinc-Oxide (ITZO).

19. The method according to claim 14 , wherein the first photo-acryl layer is thicker than the second photo-acryl layer.

20. The method according to claim 14 , further comprising controlling the curvature of the protrusions to achieve reflexibiltiy having trapezoidal reflection characteristics.

21. The LCD device according to claim 1 , wherein an upper surface of the insulating layer is planar.

22. The LCD device according to claim 1 , wherein the insulating layer has only a contact hole for the thin film transistor and the only contact hole is through the insulating layer.

23. The method according to claim 5 , wherein the step of forming the insulating layer includes forming the insulating layer having a planar upper surface.

24. The method according to claim 5 , further comprising forming only a contact hole through the insulating layer for the thin film transistor.

25. The method according to claim 14 , wherein the step of forming the first insulating layer includes forming the first insulating layer having a planar upper surface.

26. The method according to claim 14 , further comprising forming only a contact hole through the first insulating layer for the thin film transistor.