Liquid crystal display device using seal pattern and fabricating method thereof

1. A liquid crystal display device, comprising:

first and second substrates facing and spaced apart from each other;

a first inorganic insulating layer on inner surface of the first substrate;

a second inorganic insulating layer over the inner surface of the first substrate;

an organic insulating layer between the first and second inorganic insulating layers, the organic insulating layer being disposed below the second inorganic insulating layer; and

a seal pattern between the second inorganic insulating layer and an inner surface of the second substrate, the seal pattern contacting at least a part of the second inorganic insulating layer.

2. The device of claim 1 , wherein the first and second inorganic insulating layers comprise at least one inorganic material selected from the group consisting of silicon nitride (SiN x ), silicon oxide (SiO 2 ) and silicon oxynitride (SiO x N y ).

3. The device of claim 1 , wherein the organic insulating layer comprises at least one organic material selected from the group consisting of benzocyclobutene (BCB), acrylic resin and methacrylic resin.

4. The device of claim 1 , wherein the first inorganic insulating layer has at least one groove through the organic insulating layer.

5. The device of claim 4 , wherein the second inorganic insulating layer contacts the first inorganic insulating layer through the at least one groove.

6. The device of claim 1 , further comprising:

a metal layer between the organic insulating layer and the first inorganic insulating layer.

7. The device of claim 6 , wherein the organic insulating layer has at least one hole through the second inorganic insulating layer and the seal pattern contacts the metal layer through the at least one hole.

8. The device of claim 7 , further comprising:

a thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode on the first substrate, wherein the metal layer is the same layer as the source and drain electrodes.

9. A liquid crystal display device, comprising:

first and second substrates facing and spaced apart from each other;

a first inorganic insulating layer on an inner surface of the first substrate;

a second inorganic insulating layer over the inner surface of the first substrate;

an organic insulating layer between the first and second inorganic insulating layers; and

a seal pattern between the second inorganic insulating layer and an inner surface of the second substrate, the seal pattern contacting the second inorganic insulating layer,

wherein the first inorganic insulating layer has at least one groove through the second inorganic insulating layer and the organic insulating layer.

10. The device of claim 9 , wherein the seal pattern contacts the first inorganic insulating layer through the at least one groove.

11. The device of claim 10 , wherein a bottom surface of the at least one groove has an unevenness.

12. The device of claim 9 , further comprising:

a metal layer between the first substrate and the first inorganic insulating layer.

13. The device of claim 12 , wherein the seal pattern contacts the metal layer through the at least one groove.

14. The device of claim 13 , further comprising:

a thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode on the first substrate, wherein the metal layer is the same layer as the gate electrode.

15. A fabricating method of a liquid crystal display device, comprising:

forming a thin film transistor on a first substrate;

forming a passivation layer covering the thin film transistor, and the passivation layer includes an organic material;

forming an inorganic insulating layer on the passivation layer;

forming a seal pattern surrounding the thin film transistor; and

attaching a second substrate to the first substrate such that the seal pattern contacts the inorganic insulating layer and the second substrate.

16. The method of claim 15 , wherein a step of forming the thin film transistor comprises:

forming a gate electrode on the first substrate;

forming a gate insulating layer on the gate electrode, and the gate insulating layer includes an inorganic material;

forming an active layer on the gate insulating layer; and

forming source and drain electrodes on the active layer.

17. The method of claim 16 , further comprising:

forming at least one groove through the passivation layer and at least part of the gate insulating layer.

18. The method of claim 17 , wherein the inorganic insulating layer contacts the gate insulating layer.

19. The method of claim 16 , further comprising:

forming a metal layer between the gate insulating layer and the passivation layer; and

forming at least one hole through the inorganic insulating layer and the passivation layer.

20. The method of claim 19 , wherein the metal layer is simultaneously formed with the source and drain electrodes and the seal pattern contacts the metal layer through the at least one hole.

21. The method of claim 15 , wherein the inorganic insulating layer comprises at least one inorganic material selected from the group consisting of silicon nitride (SiN x ), silicon oxide (SiO 2 ) and silicon oxynitride (SiO x N y ).

22. A fabricating method of a liquid crystal display device, comprising:

forming a thin film transistor on a first substrate, wherein the step of forming the thin film transistor includes forming a gate electrode on the first substrate, forming a gate insulating layer on the gate electrode, and the gate insulating layer includes an inorganic material, forming an active layer on the gate insulating layer, and forming source and drain electrodes on the active layer;

forming a passivation layer covering the thin film transistor, and the passivation layer includes an organic material;

forming an inorganic insulating layer on the passivation layer;

forming a seal pattern surrounding the thin film transistor; and

attaching a second substrate to the first substrate such that the seal pattern contacts the inorganic insulating layer and the second substrate,

wherein the method further comprises forming at least one groove through at least part of the gate insulating layer, the passivation layer and at least part of the inorganic insulating layer.

23. The method of claim 22 , wherein the seal pattern contacts the gate insulating layer.

24. The method of claim 22 , further comprising:

forming a metal layer between the first substrate and the gate insulating layer.

25. The method of claim 24 , wherein the metal layer is simultaneously formed with the gate electrode, and the seal pattern contacts the metal layer.