Semiconductor device
View Patent ↗The present invention prevents electrostatic discharge damage which may occur when a device chip which has a circuit with fuses mounted thereon is packaged by COG packaging, without increasing an area occupied on the device chip. The height from the chip substrate surface to the top face 138 b of the chip terminal 103 b formed on the chip substrate surface 136 is formed to be higher than the height from the chip substrate surface to the top face 138 a of the fuse terminal 103 a . By this, an electrostatic discharge occurs at the chip terminal side when packaged in a COG packaging, so an electrostatic discharge does not occur to the fuse terminal side.
1. A semiconductor device, comprising:
exposed fuse terminals provided adjacent a chip substrate surface; and
an exposed discharge contribution terminal which is provided adjacent said chip substrate surface;
wherein a first height, from said chip substrate surface to a top face of said discharge contribution terminal, is higher than a second height, from said chip substrate surface to a top face of said fuse terminals.
2. The semiconductor device according to claim 1 , wherein said discharge contribution terminal is a chip terminal.
3. The semiconductor device according to claim 1 , wherein said discharge contribution terminal is a dummy terminal which is disposed so as to surround the fuse terminals.
4. The semiconductor device according to claim 1 , comprising a protective circuit, and wherein said discharge contribution terminal is connected to said protective circuit.
5. The semiconductor device according to claim 4 , wherein said dummy terminal is electrically connected to a reference voltage power supply.
6. The semiconductor device according to claim 1 , wherein said fuse terminals and said discharge contribution terminal comprise respective bumps that are disposed on a top surface of said semiconductor device.
7. A semiconductor device, comprising:
fuse terminals provided on a chip substrate surface; and
a discharge contribution terminal which is provided at the upper side on said chip substrate surface and of which the height from said chip substrate surface to the top face is higher than the height of the top face of said fuse terminals;
wherein said discharge contribution terminal is a dummy terminal which is disposed so as to surround the fuse terminals.
8. The semiconductor device according to claim 7 , wherein said dummy terminal is electrically connected to a reference voltage power supply.