Light-emitting device and method for manufacturing the same
View Patent ↗A light-emitting device and a method for manufacturing the same are described, by forming a SiN/Al 1-x-y In x Ga y N(0≦x≦1, 0≦y≦1, x+y≦1) superlattice layer between a substrate and an undoped GaN as a buffer layer, so as to reduce dislocation density of the buffer layer. In the SiN/Al 1-x-y In x Ga y N(0≦x≦1, 0≦y≦1, x+y≦1) superlattice layer, Al 1-x-y In x Ga y N(0≦x≦1, 0≦y≦1, x+y≦1) can be n-type, p-type or undoped.
1. A light-emitting device, comprising:
a substrate;
a SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) superlattice buffer layer located on the substrate; and
an illuminant epitaxial structure located on the SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) superlattice buffer layer.
2. The light-emitting device according to claim 1 , wherein the substrate is a transparent substrate.
3. The light-emitting device according to claim 1 , wherein the substrate is a sapphire substrate.
4. The light-emitting device according to claim 1 , wherein a material of the substrate is selected from the group consisting of Al 2 O 3 , SiC, Si, GaN and GaAs.
5. The light-emitting device according to claim 1 , wherein a thickness of the SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) superlattice buffer layer is between about 10 Å and 2000 Å.
6. The light-emitting device according to claim 1 , wherein a number of SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) structures in the SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) superlattice buffer layer is greater than or equal to 2.
7. The light-emitting device according to claim 1 , wherein a composition of the SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) superlattice buffer layer is selected from the group consisting of a Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1)/SiN structure and a SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) structure, and a material in contact with the substrate is selected from the group consisting of SiN and Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1).
8. The light-emitting device according to claim 1 , wherein the light-emitting device is selected from the group consisting of a light-emitting diode and a laser diode.
9. A method for manufacturing a light-emitting device, comprising:
providing a substrate;
forming a SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) superlattice buffer layer on the substrate; and
forming an illuminant epitaxial structure on the SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) superlattice buffer layer.
10. The method for manufacturing a light-emitting device according to claim 9 , wherein in the step of forming the SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) superlattice buffer layer, a temperature for growing SiN of the SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) superlattice buffer layer is between about 200° C. and 900° C.
11. The method for manufacturing a light-emitting device according to claim 9 , wherein in the step of forming the SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) superlattice buffer layer, a temperature for growing Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) of the SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) superlattice buffer layer is between about 200° C. and 900° C.
12. The method for manufacturing a light-emitting device according to claim 9 , wherein the substrate is a transparent substrate.
13. The method for manufacturing a light-emitting device according to claim 9 , wherein the substrate is a sapphire substrate.
14. The method for manufacturing a light-emitting device according to claim 9 , wherein a material of the substrate is selected from the group consisting of Al 2 O 3 , SiC, Si, GaN and GaAs.
15. The method for manufacturing a light-emitting device according to claim 9 , wherein a thickness of the SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) superlattice buffer layer is between about 10 Å and 2000 Å.
16. The method for manufacturing a light-emitting device according to claim 9 , wherein a number of SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) structures in the SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) superlattice buffer layer is greater than or equal to 2.
17. The method for manufacturing a light-emitting device according to claim 9 , wherein a composition of the SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) superlattice buffer layer is selected from the group consisting of a Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1)/SiN structure and a SiN/Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1) structure, and a material in contact with the substrate is selected from the group consisting of SiN and Al 1-x-y In x Ga y N (0≦x≦1, 0≦y≦1, x+y≦1).
18. The method for manufacturing a light-emitting device according to claim 9 , wherein the light-emitting device is selected from the group consisting of a light-emitting diode and a laser diode.