Chemical-mechanical polishing slurry and method
View Patent ↗The present invention provides a chemical-mechanical polishing slurry for use in removing a barrier layer during the fabrication of a damascene structure. The slurry according to the invention includes an agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed. In the presently most preferred embodiment of the invention, the agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed is L-lysine and/or L-arginine. The present invention also provides a method of suppressing the removal rate of an underlying silicon-containing dielectric layer during the chemical-mechanical polishing of a barrier layer in a damascene structure. The method according to the invention includes polishing the barrier layer with a slurry comprising an agent that suppresses the rate at which said underlying silicon-containing dielectric layer is removed.
1. A method of suppressing the removal rate of an underlying silicon-containing dielectric layer during the chemical-mechanical polishing of a barrier layer in a damascene structure, said method comprising polishing said barrier layer using a chemical-mechanical polishing slurry comprising an amount of an agent selected from the group consisting of lysine and arginine sufficient to suppress the rate at which said underlying silicon-containing dielectric layer is removed by at least about 50% as compared to the rate at which said underlying silicon-containing dielectric layer would be removed if said agent was not present in said slurry.
2. The method according to claim 1 wherein said agent that suppresses the rate at which said underlying silicon-containing dielectric layer is removed comprises from about 0.1% to about 5.0% by weight of said slurry.
3. The method according to claim 1 wherein said underlying silicon-containing dielectric layer is selected from the group consisting of polysilicon, single-crystalline silicon, silicon dioxide, silicon-containing low-k inorganic and organic materials, phosphosilicate glass, and borophosphosilicate glass.
4. The method according to claim 1 wherein said barrier layer comprises tantalum and/or tantalum nitride.
5. The method according to claim 4 wherein the pH of said slurry is about 7.0 or higher.
6. The method according to claim 1 wherein said barrier layer comprises titanium and/or titanium nitride.
7. The method according to claim 6 wherein the pH of said slurry is about 7.0 or lower.
8. The method according to claim 1 further comprising abrasive particles.
9. The method according to claim 8 wherein said abrasive particles are selected from the group consisting of alumina, ceria, copper oxide, diamond, iron oxide, nickel oxide, manganese oxide, silica, silicon carbide, silicon nitride, tin oxide, titania, titanium carbide, tungsten oxide, yttria, and zirconia.
10. The method according to claim 1 wherein said chemical-mechanical polishing slurry further comprising an oxidizing agent.
11. The method according to claim 10 wherein said oxidizing agent is selected from the group consisting of peroxides, persulfates, peroxydiphosphates, ferric nitrate, periodic acid, and periodates.
12. The method of claim 1 wherein said chemical-mechanical polishing slurry further comprises a solvent.
13. The method according to claim 12 wherein said solvent comprises deionized water.
14. A method removing a barrier layer comprising tantalum and/or tantalum nitride during the fabrication of a damascene structure, the method comprising:
providing a chemical-mechanical polishing slurry comprising an amount of an agent selected from the group consisting of lysine and arginine sufficient to suppress the rate at which a silicon-containing dielectric layer underlying the barrier layer is removed by at least about 50% as compared to the rate at which said underlying silicon-containing dielectric layer would be removed if said agent was not present in said slurry, wherein the pH of the slurry is about 7.0 or higher; and
polishing the barrier layer using the chemical mechanical polishing slurry.
15. The method according to claim 14 wherein said agent that suppresses the rate at which the underlying silicon-containing dielectric layer is removed comprises from about 0.1% to about 5.0% by weight of said chemical-mechanical polishing slurry.
16. The method according to claim 15 wherein the chemical mechanical polishing slurry further comprises:
abrasive particles;
an oxidizing agent selected from the group consisting of peroxides, persulfates,
peroxydiphosphates, ferric nitrate, periodic acid, and periodates; and
a solvent.
17. A method removing a barrier layer comprising titanium and/or ttitanium nitride during the fabrication of a damascene structure, the method comprising:
providing a chemical-mechanical polishing slurry comprising an amount of an agent selected from the group consisting of lysine and arginine sufficient to suppress the rate at which a silicon-containing dielectric layer underlying the barrier layer is removed by at least about 50% as compared to the rate at which said underlying silicon-containing dielectric layer would be removed if said agent was not present in said slurry, wherein the pH of the slurry is about 7.0 or lower; and
polishing the barrier layer using the chemical mechanical polishing slurry.
18. The method according to claim 17 wherein said agent that suppresses the rate at which the underlying silicon-containing dielectric layer is removed comprises from about 0.1% to about 5.0% by weight of said chemical-mechanical polishing slurry.
19. The method according to claim 18 wherein the chemical mechanical polishing slurry further comprises:
abrasive particles;
an oxidizing agent selected from the group consisting of peroxides, persulfates,
peroxydiphosphates, ferric nitrate, periodic acid, and periodates; and
a solvent.