Photoresist composition for multi-micro nozzle head coater
View Patent ↗The present invention relates to a photoresist composition for an MMN (multi-micro nozzle) head coater, more particularly to a photoresist composition comprising a novolak resin with a molecular weight ranging from 2000 to 12,000, a diazide photoactive compound, an organic solvent, and a Si-based surfactant for use in liquid crystal display circuits. The photoresist composition for liquid crystal display circuits of the present invention solves the stain problem, which occurs in MMN head coaters used for large-scale substrate glass, and improves coating characteristics, so that it can be utilized industrially and is expected to significantly improve productivity.
1. A method for forming a photoresist pattern on a large-scale substrate, comprising:
applying a photoresist composition to the large-scale substrate with a multi-micro nozzle (MMN) head coater,
drying the photoresist composition applied to the large-scale substrate to prepare a photoresist film;
placing a patterned mask over the photoresist film and substrate and exposing the photoresist film to light; and
developing the exposed photoresist film to obtain a photoresist pattern;
wherein the photoresist composition comprises:
(a) 5 wt % to 30 wt % of a polymer resin represented by the following Chemical Formula 1;
(b) 2 wt % to 10 wt % of a diazide photoactive compound;
(c) 50 wt % to 90 wt % of an organic solvent; and
(d) 500 to 4000 ppm of a Si based surfactant:
wherein R is C 1 to C 4 alkyl, and n is an integer of 15 to 10,000, and wherein the Si-based surfactant is a polyoxyalkylene dimethylpolysiloxane copolymer compound,
wherein the composition and content of solvent and surfactant is controlled to prevent stains and improve coating characteristics in a photoresist film formed on the substrate from the photoresist composition, and
wherein stains include central stains, lateral stains, or cloudy stains.
2. The method of claim 1 , wherein the polymer resin is a novolak resin having a molecular weight ranging from about 2000 to 12,000.
3. The method of claim 1 , wherein the organic solvent is one or more substances selected from the group consisting of propyleneglycol methyl ether acetate (PGMEA), ethyl lactate (EL), 2-methoxyethylacetate (MMP), n-butyl acetate (nBA), propyleneglycol monomethyl ether (PGME), and ethyl-3-ethoxypropionate (EEP).
4. The method of claim 1 , wherein the organic solvent is a mixture of 50 wt % to 90 wt % of propyleneglycol methyl ether acetate (PGMEA) and 10 wt % to 50 wt % of ethyl-3-ethoxypropionate (EEP).
5. The method of claim 1 , wherein the polymer resin is a novolak resin having a molecular weight ranging from about 2,000 to 12,000, and the organic solvent comprises one or more substances selected from the group consisting of propyleneglycol methyl ether acetate (PGMEA), ethyl lactate (EL), 2-methoxyethylacetate (MMP), n-butyl acetate (nBA), propyleneglycol monomethyl ether (PGME), and ethyl-3-ethoxypropionate (EEP)
wherein the organic solvent is a mixture of 50 wt % to 90 wt % of propyleneglycol methyl ether acetate (PGMEA) and 10 wt % to 50 wt % of ethyl-3-ethoxypropionate (EEP).
6. The method of claim 1 , wherein the photoresist composition further comprises one or more nitrogen-containing crosslinking agents selected from the group consisting of a condensation product of urea and formaldehyde, a condensation product of melamine and formaldehyde, a methylol urea alkyl aldehyde condensate, a methylol urea alkylether, and a methylol melamine alkylether.
7. The method of claim 1 , wherein applying the photoresist composition is by the spray dispense method or the spin coating method.
8. The method of claim 1 , which is applied to liquid crystal display circuits having a large-scale substrate glass.
9. A method to prevent stains in a photoresist film applied to a large-scale substrate by a multi-micro nozzle (MMN) head coater, comprising
applying a photoresist composition to the large-scale substrate with the MMN head coater by spray-dispense coating and spinning, wherein the photoresist composition comprises:
(a) 5 wt % to 30 wt % of a polymer resin represented by the following Chemical Formula 1;
(b) 2 wt % to 10 wt % of a diazide photoactive compound;
(c) 50 wt % to 90 wt % of an organic solvent; and
(d) 500 to 4000 ppm of a Si based surfactant:
wherein R is C 1 to C 4 alkyl, and n is an integer of 15 to 10,000,
wherein the Si-based surfactant is a polyoxyalkylene dimethylpolysiloxane copolymer compound, the organic solvent is a mixture of 50 wt % to 90 wt % of propyleneglycol methyl ether acetate (PGMEA) and 10 wt % to 50 wt % of ethyl-3-ethoxypropionate (EEP), and the composition and content of solvent and surfactant is controlled to prevent stains and improve coating characteristics in the photoresist film formed on the substrate from the photoresist composition, and
wherein stains include central stains, lateral stains, or cloudy stains.