A single-power-supply Idss-bias RF amplifier is disclosed, which is composed by the first and second stages Amplifiers. The two stages have the same circuit topology except matching circuits. The source terminal of amplifier is grounded directly to reduce a parasitic effect from a bias circuit. It will increase the stability of the RF amplifier and avoid an oscillation. The lossy matching circuits and eliminating resonator circuit are designed to make the RF amplifier unconditional stable. A variable resister is put into to adjust a D.C. voltage on the drain terminal. The current of amplifier could be controlled in a reasonable range. High gain and quit low noise have been obtained.
1. A I DSS RF amplifier, comprising:
a first stage amplifier having a first transistor, comprising the grounded source terminal and the gate terminal grounded through a first choke; and
a second stage amplifier having a second transistor, comprising the grounded source terminal and the gate terminal grounded through a second choke;
wherein the first and the second stage amplifier have the same topology except matching circuits, the first choke and the second choke do not include bypass capacitors so that the gate terminals of the first transistor and the second transistor are grounded in DC paths, as well as the drain terminal of the first transistor is grounded by series of a fourth resistor and a first capacitor, and further is connected to a first DC power supply through a first resistor and a second RF choke in which a node between the first resistor and the second RF choke is grounded by a second capacitor.
2. The I DSS RF amplifier of claim 1 , wherein an output terminal of the first stage amplifier is connected to the gate terminal of the second transistor through a third capacitor and a third resistor.
3. The I DSS RF amplifier of claim 2 , wherein the first resistor is a variable resistor to adjust a voltage of the drain terminal of the first transistor.
4. The I DSS RF amplifier of claim 3 , wherein the first transistor and the second transistors are high frequency field effect transistors, such as MESFETs and HEMTs.
5. The I DSS RF amplifier of claim 4 , wherein a drain terminal of the second transistor is grounded by a fifth resistor and a fourth capacitor.
6. The IDSS RF amplifier of claim 5 , wherein the drain terminal of the second transistor further is connected to a second DC power supply through a second resistor and a fourth RF choke, and a node between the second resistor and the fourth RF choke is grounded by a fifth capacitor.
7. The I DSS RF amplifier of claim 6 , wherein the drain terminal of the second transistor is connected to a sixth capacitor which is blocking capacitor.