Method for manufacturing a diffuser for a backlight module
A method for manufacturing a diffuser for a backlight module is disclosed. The method includes providing a transparent substrate; forming a first transparent photoresist layer on the transparent substrate; spreading a plurality of masking particles on the first transparent photoresist layer; exposing and developing the first transparent photoresist layer; removing the masking particles; etching the exposed region of the first transparent photoresist layer to form a first scattering array; and optionally forming a passivation layer on the first transparent photoresist layer.
1. A method for manufacturing a diffuser for a backlight module comprising:
(a) providing a transparent substrate;
(b) forming a first transparent photoresist layer on said transparent substrate;
(c) spreading a plurality of masking particles on said first transparent photoresist layer;
(d) exposing said first transparent photoresist layer;
(e) removing said masking particles; and
(f) etching to develop said first transparent photoresist layer to form a first scattering array.
2. The method as claimed in claim 1 further comprising a step (g) forming a passivation layer on said first transparent photoresist layer.
3. The method as claimed in claim 2 , wherein said passivation layer is made of polyacrylates, polycarbonate, polyethylene terephthalate (PET), or polyethylene (PE).
4. The method as claimed in claim 1 , wherein said first transparent photoresist layer having at least a photo-sensitive polymer and a photo initiator.
5. The method as claimed in claim 1 , wherein said transparent substrate is made of acrylic, polyethylene terephthalate (PET), or polycarbonate (PC).
6. The method as claimed in claim 1 , wherein said first transparent photoresist layer is a polyacrylate-based photoresist.
7. The method as claimed in claim 1 , wherein said masking particles are made of glass, TiO2, silica, or polystyrene.
8. The method as claimed in claim 1 , wherein the particle size of said masking particles ranges from 100 nm to 50 μm.
9. The method as claimed in claim 1 further comprising the following steps after step (f):
(f-1) depositing a second transparent photoresist layer on said transparent substrate and said first scattering array;
(f-2) spreading a plurality of masking particles on said second transparent photoresist layer;
(f-3) exposing said second transparent photoresist layer;
(f-4) removing said masking particles; and
(f-5) etching to develop said second transparent photoresist layer to form a second scattering array.
10. The method as claimed in claim 9 further comprising a step (g 2 ) forming a passivation layer on said second transparent photoresist layer.
11. The method as claimed in claim 9 , wherein said second transparent photoresist layer having at least a photo-sensitive polymer and a photo initiator.
12. The method as claimed in claim 9 , wherein said second transparent photoresist layer is a polyacrylate-based photoresist.