Dispersions and films comprising conducting polymer for optoelectronic devices
View Patent ↗A dispersion, and a film and optoelectronic devices formed from the dispersion are provided. The dispersion comprising conducting polymer containing particles having a particle size of less than 450 nm, wherein the conducting polymer comprises substituted or unsubstituted, uncharged or charged polymerized units of thieno[3,4-b]thiophene, and wherein a film drop cast from the dispersion has a conductivity from 10 −1 to 10 −6 S/cm measured using the four point probe method.
1. An optoeletronic device comprising a substrate, an anode, a cathode and a first film located between the anode and cathode that comprises substituted or unsubstituted, uncharged or charged polymerized units of thieno[3,4-b]thiophene, and wherein the first film has a conductivity from about 10 −2 to 10 −6 S/cm and wherein the device has a rectification ratio of greater than about 75; and a second polymeric film comprising a light emitting polymer that comprises at least one member selected from the group consisting of poly(phenylene vinylene)s and polyfluorenes.
2. The optoelectronic device of claim 1 wherein the first film comprises particles having a Darticle size of less than about 200 nm.
3. The optoelectronic device of claim 1 wherein the first film has a conductivity of from about 10 −2 to 10 −5 S/cm.
4. The optoelectronic device of claim 1 wherein the thieno[3,4-b]thiophene comprises substituted or unsubstituted, uncharged or charged polymerized units of
where R is hydrogen, substituted or unsubstituted (C 1 -C 18 )-alkyl, preferably (C 1 -C 10 )-alkyl, in particular (C 1 -C 6 )-alkyl, for example, t-butyl, (C 3 -C 7 )-cycloalkyl, (C 1 -C 18 )-alkyloxy, preferably (C 1 -C 10 )-alkyloxy, or (C 2 -C 18 )-alkyloxy ester, phenyl and substituted phenyl, SF 5 .
5. The optoelectronic device of claim 1 wherein the first film is obtained from a dispersion comprising water, at least one member selected from the group consisting of polymeric sulfonic acids and polystyrene sulfonic acids, and at least one conducting polymer.
6. The optoelectronic device of claim 5 wherein said member comprises polymeric sulfonic acids.
7. The optoelectronic device of claim 5 wherein said member comprises polystyrene sulfonic acids.
8. The optoelectronic device of claim 1 wherein said device comprises a member selected from the group consisting of a light emitting diode, a photovoltaic device, and a laser diode.
9. The optoelectronic device of claim 1 wherein said first film comprises a hole injection layer.
10. The optoelectronic device of claim 1 wherein said first film comprises a hole transport layer.
11. The optoelectronic device of claim 1 wherein said first film comprises a hole injection and hole transport layer.
12. The optoelectronic device of claim 1 wherein the second film comprises a poly(phenylene vinylene) and said poly(phenylene vinylene) comprises poly(2-methoxy, 5-(2′-ethyl-hexyloxy)-p-phenylene-vinylene).
13. The optoelectronic device of claim 1 wherein said device comprises a light emitting diode and has a brightness at a current density of 100 mA/cm2 of greater than about 830 cd/m2.
14. The optoelectronic device of claim 1 wherein the device comprises a photovoltaic device and, said first film comprises a hole transport layer.
15. An optoeletronic device comprising a substrate, an anode, a cathode, and a first film located between the anode and cathode that comprises substituted or unsubstituted, uncharged or charged polymerized units of thieno[3,4-b]thiophene, and wherein the first film has a conductivity from about 10 −2 to 10 −6 S/cm, and a second polymeric film comprising a phosphorescent emitter comprising tris(2-(4-tolyl)phenylpyridine) iridium (III).