Thin film structure from LILAC annealing
A system and method are provided for reducing film surface protrusions in the fabrication of LILAC films. The method comprises: forming an amorphous film with a first thickness; annealing the film using a LILAC process, with beamlets having a width in the range of 3 to 10 microns; in response to annealing, forming protrusions on the film surface; optionally oxidizing the film surface; thinning the film; and, in response to thinning the film, smoothing the film surface. Typically, the film surface is smoothed to a surface flatness of 300 Å, or less. In some aspects of the method, oxidizing the film surface includes oxidizing the film surface to a depth. Then, thinning the film includes thinning the film to a third thickness equal to the first thickness minus the depth.
1. A polycrystalline thin film structure comprising:
a film layer having a polycrystallline structure with crystal grain boundaries and a thickness in a range of 500 to 3000 Å;
a layer of oxide overlying the film layer resulting from an oxidation of a surface of the film layer; and,
protrusions formed in a top surface of the oxide layer at the film layer crystal grain boundaries, having a height of greater than half of the film layer thickness.
2. The polycrystalline thin film structure of claim 1 wherein the protrusions are substantially oxide protrusions.
3. The polycrystalline thin film structure of claim 1 wherein the film is silicon and has a thickness of about 1000 Å, and crystal grains in the silicon film have a grain length in the range of 1.5 to 4 microns between grain boundaries.
4. The polycrystalline thin film structure of claim 1 wherein the film is silicon and has a thickness is 500 Å, and crystal grains in the silicon film have a grain length in the range of 1.5 to 25 microns between grain boundaries.
5. The polycrystalline thin film structure of claim 1 wherein the film thickness is about 750 Å; and,
wherein the protrusions have a height of about 750 Å.
6. The polycrystalline thin film structure of claim 1 wherein the film layer is a material selected from the group including silicon and silicon germanium.
7. A polycrystalline thin film structure comprising:
a film layer having a film surface and a polycrystalline structure with crystal grain boundaries;
parallel ridge protrusions formed in the film surface at the crystal grain boundaries, each ridge protrusion separated from an adjacent ridge protrusion by a distance in the range of about 1.5 to 4 microns;
wherein the film layer has a first thickness; and,
wherein the ridge protrusions have a height greater than the first thickness.
8. A post-annealed polycrystalline thin film intermediate structure comprising:
a film layer having a film surface and a polycrystalline structure with crystal grain boundaries;
parallel ridge protrusions formed in the film surface at the crystal grain boundaries;
wherein the film layer has a first thickness; and,
wherein the ridge protrusions have a height greater than the first thickness.
9. The intermediate structure of claim 8 wherein each ridge protrusion is separated from an adjacent ridge protrusion by a distance in the range of about 1.5 to 4 microns.
10. A polycrystalline thin film structure comprising:
a top surface;
a silicon film layer having a polycrystalline structure with crystal grain boundaries, a thickness of about 1000 Å, and crystal grains in the silicon film having a grain length in the range of 1.5 to 4 microns between grain boundaries; and,
protrusions formed in the top surface at the film layer crystal grain boundaries, having a height of greater than half of the film layer thickness.
11. A polycrystalline thin film structure comprising:
a top surface;
a silicon film layer having a polycrystalline structure with crystal grain boundaries, a thickness of about 500 Å, and crystal grains in the silicon film having a grain length in the range of 1.5 to 2.5 microns between gram boundaries; and,
protrusions formed in the top surface at the mm layer crystal grain boundaries, having a height of greater than half of the film layer thickness.
12. A polycrystalline thin film structure comprising:
a top surface;
a film layer having a polycrystalline structure with crystal grain boundaries and a thickness of about 750 Å; and,
protrusions formed in the top surface at the film layer crystal grain boundaries, having a height of about 750 Å.