Buffered-layer memory cell
View Patent ↗A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer. In some aspects of the method the semiconductor buffer layer is formed from YBa 2 Cu 3 O 7-X (YBCO), indium oxide (In 2 O 3 ), or ruthenium oxide (RuO 2 ), having a thickness in the range of 10 to 200 nanometers (nm). The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be a Pr 1-X Ca X MnO 3 (PCMO) memory film, where x is in the region between 0.1 and 0.6, with a thickness in the range of 10 to 200 nm.
1. A method for forming a buffered-layer memory cell, the method comprising:
forming a bottom electrode;
forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode;
forming a YBa 2 Cu 3 O 7-X (YBCO) buffer layer overlying the memory film; and,
forming a top electrode overlying the YBCO layer.
2. The method of claim 1 wherein forming a bottom electrode includes forming an electrode from a material selected from the group including TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, and PtIrOx compounds; and,
wherein forming a top electrode includes forming an electrode from a material selected from the group including TiN, TiN/Pt, TiN/In, PtRhOx compounds, and PtIrOx compounds.
3. The method of claim 1 wherein forming a CMR memory film overlying the bottom electrode includes forming a Pr 1-X Ca X MnO 3 (PCMO) memory film, where x is in the region between 0.1 and 0.6.
4. The method of claim 1 wherein forming the CMR memory film includes forming a CMR memory film with a thickness in the range of 10 to 200 nm.
5. A method for forming a buffered-layer memory cell, the method comprising:
forming a bottom electrode;
forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode;
forming a indium oxide (In 2 O 3 ) buffer layer overlying the memory film; and,
forming a top electrode overlying the In 2 O 3 layer.
6. The method of claim 5 wherein forming a bottom electrode includes forming an electrode from a material selected from the group including TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, and PtIrOx compounds; and,
wherein forming a top electrode includes forming an electrode from a material selected from the group including TiN, TiN/Pt, TiN/In, PtRhOx compounds, and PtIrOx compounds.
7. The method of claim 5 wherein forming a CMR memory film overlying the bottom electrode includes forming a Pr 1-X Ca X MnO 3 (PCMO) memory film, where x is in the region between 0.1 and 0.6.
8. The method of claim 5 wherein forming the CMR memory film includes forming a CMR memory film with a thickness in the range of 10 to 200 nm.
9. A method for forming a buffered-layer memory cell, the method comprising:
forming a bottom electrode;
forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode;
forming a ruthenium oxide (RuO 2 ) buffer layer overlying the memory film; and,
forming a top electrode overlying the RuO 2 layer.
10. The method of claim 9 wherein forming a bottom electrode includes forming an electrode from a material selected from the group including TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, and PtIrOx compounds; and,
wherein forming a top electrode includes forming an electrode from a material selected from the group including TiN, TiN/Pt, TiN/In, PtRhOx compounds, and PtIrOx compounds.
11. The method of claim 9 wherein forming a CMR memory film overlying the bottom electrode includes forming a Pr 1-X Ca X MnO 3 (PCMO) memory film, where x is in the region between 0.1 and 0.6.
12. The method of claim 9 wherein forming the CMR memory film includes forming a CMR memory film with a thickness in the range of 10 to 200 nm.