Method of manufacturing semiconductor integrated circuit device having capacitor element
View Patent ↗In a complete CMOS SRAM having a memory cell composed of six MISFETs formed over a substrate, a capacitor element having a stack structure is formed of a lower electrode covering the memory cell, an upper electrode, and a capacitor insulating film (dielectric film) interposed between the lower electrode and the upper electrode. One electrode (the lower electrode) of the capacitor element is connected to one storage node of a flip-flop circuit, and the other electrode (the upper electrode) is connected to the other storage node. As a result, the storage node capacitance of the memory cell of the SRAM is increased to improve the soft error resistance.
1. A semiconductor integrated circuit device, comprising:
a first memory cell of a dynamic random access memory including a transfer MISFET and a first capacitor element;
a first conductive film electrically connected to one of a drain region and a source region of said transfer MISFET;
a first insulating film formed on said first conductive film; and
a second conductive formed on said first insulating film,
wherein said first capacitor element is comprised on said first conductive film, said first insulating film and said second conductive film;
a second memory cell of a static random access memory including a first first- channel MISFET, a second first-channel MISFET, a first second-channel MISFET, and a second second-channel MISFET,
wherein a drain region of said first first-channel MISFET is electrically connected to a drain region of said first second-channel MISFET, a gate electrode of said second first-channel MISFET, and a gate electrode of said second second-channel MISFET,
wherein a drain region of said second first-channel MISFET is electrically connected to a drain region of said second second-channel MISFET, a gate electrode of said first first-channel MISFET, and a gate electrode of said first second-channel MISFET;
a third conductive film electrically connected to said drain region of said first first-channel MISFET;
a second insulating film formed on said third conductive film; and
a fourth conductive film formed on said second insulating film;
wherein a second capacitor element is comprised of said third conductive film, said second insulating film and said fourth conductive film,
wherein said third conductive film is comprised of a same level layer as said first conductive film,
wherein said second insulating film is comprised of a same level layer as said first insulating film, and
wherein said fourth conductive film is comprised of a same level layer as said second conductive film.
2. A semiconductor integrated circuit device according to claim 1 , further comprising:
a third insulating film formed over said first capacitor element and said second capacitor element and having a flattened surface;
a data formed over said third insulating film and electrically connected to another of said one of said drain region and said source region of said transfer MISFET; and
a frist local interconnection and a second local interconnection formed over said third insulating film,
wherein said first local interconnection is electrically connected to said drain region of said first first-channel MISFET and said drain region of said first second- channel MISFET, and
wherein said second local interconnection is electrically connected to said drain region of said second first-channel MISFET and said drain region of said second second-channel MISFET.
3. A semiconductor integrated circuit device according to claim 1 , wherein the first memory cell is provided over a same semiconductor substrate in which the second memory cell is provided.
4. A semiconductor integrated circuit device, comprising:
a first memory cell of a dynamic random access memory including a transfer MISFET and a first capacitor element;
a first conductive film electrically connected to one of a drain region and a source region of said transfer MISFET;
a first insulating film formed on said first conductive film; and
a second conductive film formed on said first insulating film, wherein said first capacitor element is comprised of said first conductive film, said first insulating film and said second conductive film;
a second memory cell of a static random access memory including a first first-channel MISFET, a second first-channel MISFET, a first second-channel MISFET, and a second second-channel MISFET,
wherein a drain region of said first first-channel MISFET is electrically connected to a drain region of said first second-channel MISFET, a gate electrode of said second first-channel MISFET, and a gate electrode of said second second-channel MISFET, and
wherein a drain region of said second first-channel MISFET is electrically connected to a drain region of said second second-channel MISFET, a gate electrode of said first first-channel MISFET, and a gate electrode of said first second-channel MISFET;
a second including film formed over said first capacitor element and having a flattened surface;
a data line formed over said second insulating film and electrically connected to another of said one of said drain region and said source region of said transfer MISFET; and
a first local interconnection and a second local interconnection formed over said second insulating film,
wherein said first local interconnection is electrically connected to said drain region of said first first-channel MISFET and said drain region of said first second-channel MISFET, and
wherein said second local interconnection is electrically connected to said drain region of said second first-channel MISFET and said drain region of said second second-channel MISFET.
5. A semiconductor integrated circuit device according to claim 4 , further comprising:
a third insulating film covering said first local interconnection and said second local interconnection; and
a complementary data line formed over said third insulating film and electrically coupled to said second memory cell.
6. A semiconductor integrated circuit device according to claim 4 , further comprising:
third conductive film electrically connected to said drain region of said first first-channel MISFET;
a third insulating film formed on said third conductive film; and
a fourth conductive film formed on said third insulating film,
wherein a second capacitor element is comprised of said third conductive film, said third insulating film and said fourth conductive film,
wherein said third conductive film is comprised of a same level layer as said first conductive film,
wherein said third insulating film is comprised of a same level layer as said first insulating film, and
wherein said fourth conductive film is comprised of a same level layer as said second conductive film.
7. A semiconductor integrated circuit device according to claim 4 , wherein the first memory cell is provided over a same semiconductor substrate in which the second memory cell is provided.