Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server

1. A method of testing a mask substrate comprising:

acquiring a first information showing a mask substrate and a surface shape of a surface of the mask substrate;

acquiring a second information showing a simulated flatness of the surface of the mask substrate after being chucked on a mask stage of an exposure apparatus obtained by simulation on the basis of a measured flatness of the surface of the mask substrate measured by a flatness measuring apparatus and a structure of a mask chuck of the exposure apparatus; and

judging whether or not the simulated flatness of the surface of the mask substrate is conformed to a specification.

2. The method of testing a mask substrate according to claim 1 , wherein the mask substrate comprises a base substrate having a surface and a light shielding material layer formed to cover the surface of the base substrate, and the surface of the base substrate has a surface shape in which a peripheral portion of the surface of the base substrate is lower in height than a central portion thereof toward a peripheral edge of the base substrate.

3. The method of testing a mask substrate according to claim 2 , wherein part of the peripheral portion is a part to which a force for chucking the mask substrate on the mask stage of the exposure apparatus is applied.

4. The method of testing a mask substrate according to claim 1 , wherein the mask substrate comprises a base substrate having a surface and a light shielding material layer formed to cover the surface of the base substrate, and the surface of the base substrate has a surface shape in which a central portion of the surface of the base substrate, which extends in a direction, is high and a peripheral portion of the surface of the base substrate, which extends in the direction at each side of the central portion thereof, is lowered in height toward a peripheral edge of the base substrate.

5. A method of manufacturing an exposure mask comprising:

acquiring a first information showing a mask substrate and a surface shape of a surface of the mask substrate;

acquiring a second information showing a simulated flatness of the surface of the mask substrate after being chucked on a mask stage of an exposure apparatus obtained by simulation on the basis of a measured flatness of the surface of the mask substrate measured by a flatness measuring apparatus and a structure of a mask chuck of the exposure apparatus;

judging whether or not the simulated flatness of the surface of the mask substrate is conformed to a specification; and

processing the mask substrate to form an exposure mask if it is judged that the simulated flatness is conformed to the specification, wherein

the mask substrate comprises a base substrate having a surface and a light shielding material layer formed on the surface of the base substrate,

the surface of the base substrate has a surface shape in which a central portion of the surface of the base substrate, which extends in a direction, is high and a peripheral portion of the surface of the base substrate, which extends in the direction at each side of the central portion thereof, is lowered in height toward a peripheral edge of the base substrate, and

edge portions of the central portion of the surface of the base substrate are chucked by the mask chuck.

6. A method of manufacturing a semiconductor device comprising:

chucking an exposure mask having a pattern, which is manufactured by an exposure mask manufacturing method, on a mask stage of an exposure apparatus;

illuminating the pattern of the exposure mask by a lighting optical system, and focusing the pattern to make an image of the pattern on a substrate by a projecting optical system; and

patterning the substrate based on the image made on the substrate to form a corresponding pattern to form a semiconductor device, wherein the exposure mask manufacturing method comprises:

acquiring a first information showing a surface shape of a surface of each of a plurality of mask substrates, and a second information showing flatness of the surface of each of mask substrates after being chucked on a mask stage of an exposure apparatus obtained by simulation on the basis of flatness of the surface of each of the mask substrates measured by a flatness measuring apparatus and a structure of a mask chuck of the exposure apparatus;

forming a correspondence relation of each of the mask substrates, the first information, and the second information;

selecting one second information showing a desired flatness among the second information of the correspondence relations, and preparing a further mask substrate having the same surface shape as the surface shape shown by the first information which is in the correspondence relation including the selected second information; and

forming a desired pattern on said further mask substrate.

7. A method of manufacturing a semiconductor device comprising:

chucking an exposure mask having a pattern, which is manufactured by an exposure mask manufacturing method, on a mask stage of an exposure apparatus;

illuminating the pattern of the exposure mask by a lighting optical system, and focusing the pattern to make an image of the pattern on a substrate by a projecting optical system; and

patterning the substrate based on the image made on the substrate to form a corresponding pattern to form a semiconductor device, wherein the exposure mask manufacturing method comprises:

selecting, among second information of correspondence relations each between a first information showing a corresponding one of a plurality of mask substrates and a surface shape of a surface of the corresponding mask substrate and a second information showing flatness of the surface of the corresponding mask substrate after being chucked on a mask stage of an exposure apparatus obtained by simulation on the basis of flatness of the surface of the corresponding mask substrate measured by a flatness measuring apparatus and a structure of a mask chuck of the exposure apparatus, one such second information showing a desired flatness, and preparing a further mask substrate having the same surface shape as the surface shape shown by the first information which is in the correspondence relation including the selected second information; and

forming a desired pattern on said further mask substrate.

8. A method of manufacturing a semiconductor device comprising:

chucking an exposure mask having a pattern, which is manufactured by an exposure mask manufacturing method, on a mask stage of an exposure apparatus;

illuminating the pattern of the exposure mask by a lighting optical system, and focusing the pattern to make an image of the pattern on a substrate by a projecting optical system; and

patterning the substrate based on the image made on the substrate to form a corresponding pattern to form a semiconductor device, wherein the exposure mask manufacturing method comprises:

acquiring a first information showing a mask substrate and a surface shape of a surface of the mask substrate;

acquiring a second information showing a simulated flatness of the surface of the mask substrate after being chucked on a mask stage of an exposure apparatus obtained by simulation on the basis of a measured flatness of the surface of the mask substrate measured by a flatness measuring apparatus and a structure of a mask chuck of the exposure apparatus;

judging whether or not the simulated flatness of the surface of the mask substrate is conformed to a specification; and

processing the mask substrate to form an exposure mask if it is judged that the simulated flatness is conformed to the specification.

9. The method of manufacturing a semiconductor device according to claim 8 , wherein the mask substrate comprises a base substrate having a surface and a light shielding material layer formed to cover the surface of the base substrate, and the surface of the base substrate has a surface shape in which a peripheral portion of the surface of the base substrate is lower in height than a central portion thereof toward a peripheral edge of the base substrate.

10. The method of manufacturing a semiconductor device according to claim 9 , wherein part of the peripheral portion is a part to which a force for chucking the mask substrate on the mask stage of the exposure apparatus is applied.

11. The method of manufacturing a semiconductor device according to claim 8 , wherein the mask substrate comprises a base substrate having a surface and a light shielding material layer formed to cover the surface of the base substrate, and the surface of the base substrate has a surface shape in which a central portion of the surface of the base substrate, which extends in a direction, is high and a peripheral portion of the surface of the base substrate, which extends in the direction at each side of the central portion thereof, is lowered in height toward a peripheral edge of the base substrate.

12. A method of manufacturing a semiconductor device, comprising:

chucking an exposure mask on a mask stage of an exposure apparatus, in which the exposure mask comprises a base substrate having a pattern formed of a light shielding material layer formed to cover a surface of the base substrate, and the surface of the base substrate has a surface shape in which a central portion of the surface of the base substrate, which extends in a direction, is high and a peripheral portion of the surface of the base substrate, which extends in the direction at each side of the central portion thereof, is lowered in height toward a peripheral edge of the base substrate, and edge portions of the central portion of the surface of the base substrate are chucked on the mask stage;

illuminating the pattern formed on the exposure mask by a lighting optical system, and focusing the pattern to make an image of the pattern on a desired substrate by a projecting optical system; and

patterning the desired substrate based on the image made on the desired substrate to form a corresponding pattern to form a semiconductor device.

13. A method of manufacturing an exposure mask comprising:

acquiring a first information showing a mask substrate and a surface shape of a surface of the mask substrate;

acquiring a second information showing a simulated flatness of the surface of the mask substrate after being chucked on a mask stage of an exposure apparatus obtained by simulation on the basis of a measured flatness of the surface of the mask substrate measured by a flatness measuring apparatus and a structure of a mask chuck of the exposure apparatus;

judging whether or not the simulated flatness of the surface of the mask substrate is conformed to a specification; and

processing the mask substrate to form an exposure mask if it is judged that the simulated flatness is conformed to the specification, wherein the mask substrate comprises a base substrate having a surface and a light shielding material layer formed to cover the surface of the base substrate, and the surface of the base substrate has a surface shape in which a peripheral portion of the surface of the base substrate is lower in height than a central portion thereof toward a peripheral edge of the base substrate.

14. The method of manufacturing an exposure mask according to claim 13 , wherein part of the peripheral portion is a part to which a force for chucking the mask substrate on the mask stage of the exposure apparatus is applied.

15. The method of manufacturing an exposure mask according to claim 14 , wherein the mask substrate comprises a base substrate having a surface and a light shielding material layer formed to cover the surface of the base substrate, and the surface of the base substrate has a surface shape in which a central portion of the surface of the base substrate, which extends in a direction, is high and a peripheral portion of the surface of the base substrate, which extends in the direction at each side of the central portion thereof, is lowered in height toward a peripheral edge of the base substrate.