Thin film transistor having copper alloy wire and method of manufacturing the same
View Patent ↗A thin film transistor and a method of manufacturing the same includes forming a copper alloy line on substrate, an oxidation film formed on the upper surface of the copper alloy line. The copper alloy line includes a concentration y of magnesium, and the copper alloy line has a thickness t. the concentration y of magnesium in copper alloy line is related to the thickness is as follows: y ≤ 94 t .
1. A method of manufacturing a thin film transistor device, said method comprising:
providing a substrate;
forming a copper alloy line on said substrate, said copper alloy line including a concentration y of magnesium, and said copper alloy line having a thickness t, wherein the concentration y of magnesium in relation to the thickness t of said copper alloy line is
y
≤
94
t
;
and
heat-treating said copper alloy line in an oxygen atmosphere.
2. The method of claim 1 , wherein said heat-treatment is performed at a temperature in the range of about 250° C. to about 500° C. and in a vacuum in the range of about 5 mTorr to about 5 Torr.
3. The method of claim 1 , wherein said heat-treatment is carried out at a temperature of about 350° C. and in a vacuum of about 10 mTorr.
4. The method of claim 1 , wherein said step of heat-treating is performed using Ar plasma.
5. The method of claim 4 , wherein the temperature during said Ar plasma heat-treating is about 100° C.
6. The method of claim 1 , wherein a concentration of oxygen contained in the copper alloy line is less than about 1 atomic percent.
7. A method of manufacturing a thin film transistor, said method comprising:
providing a substrate;
forming a gate electrode made of copper alloy on said gate electrode having a thickness t, and said gate electrode including a concentration y of magnesium, wherein the concentration y in relation to the thickness y is
y
≤
94
t
;
heat-treating said gate electrode in an oxygen atmosphere so as to form an oxidation film on the upper surface of said gate electrode;
forming an active layer on the oxidation film;
forming an ohmic contact layer on the active layer; and
forming source and drain electrodes on the ohmic contact layer.
8. The method of claim 7 , further comprising the step of forming a silicon nitride film between the oxidation film and the active layer.
9. The method of claim 7 , wherein the heat-treatment is carried out at a temperature in the range of about 250° C. to about 500° C. and in a vacuum in the range of about 5 mTorr to about 5 Torr.
10. The method of claim 9 , wherein the step of heat-treating is carried out at a temperature of about 350° C. and in a vacuum of about 10 mTorr.
11. The method of claim 7 , wherein said step of heat-treating said gate electrode is performed using Ar plasma.
12. The method of claim 11 , wherein said step of heat-treating with Ar plasma is performed at a temperature of about 100° C.
13. The method of claim 7 , wherein a concentration of oxygen contained in the copper alloy line is less than about 1 atomic percent.
14. A method of manufacturing a thin film transistor device, said method comprising:
providing a substrate;
forming a copper alloy line on said substrate; and
forming an oxidation film on the upper surface of said copper alloy line;
wherein said copper alloy line includes magnesium of y concentration and having a thickness t, wherein the concentration y of magnesium in said copper alloy line in relation to the thickness t is as follow:
y
≤
94
t