Thin film transistor and method for manufacturing the same
View Patent ↗A thin film transistor is provided including a transparent insulating substrate, a lower light shielding film disposed above the transparent insulating substrate, a base interlayer film disposed above the lower light shielding film, a semiconductor film disposed above the base interlayer film, wherein the semiconductor film is formed of polycrystalline silicon. A thin film transistor further comprises roughness formed at an interface between the base interlayer and the semiconductor film, a gate insulating film above the semiconductor film, and a gate electrode above the gate insulating film.
1. A thin film transistor comprising:
a transparent insulating substrate;
a lower light shielding film disposed above said transparent insulating substrate;
a base interlayer film disposed above said lower light shielding film;
a semiconductor film disposed above said base interlayer film, said semiconductor film formed of polycrystalline silicon;
roughness formed at an interface between said base interlayer and said semiconductor film, wherein said roughness is equal to or larger than about 5 nm and equal to or smaller than about 40 nm;
a gate insulating film disposed above said semiconductor film; and
a gate electrode disposed above said gate insulating film.
2. The thin film transistor according to claim 1 ,
wherein said lower light shielding film disposed on said transparent insulating substrate,
wherein said base interlayer film disposed on said lower light shielding film,
wherein said semiconductor film disposed on said base interlayer film, said semiconductor film formed of polycrystalline silicon,
wherein said gate insulating film disposed on said semiconductor film, and
wherein said gate electrode disposed on said gate insulating film.
3. The thin film transistor according to claim 1 ,
wherein said roughness is equal to or larger than about 5 nm and equal to or smaller than about 20 nm.
4. The thin film transistor according to claim 1 ,
wherein a thickness of said semiconductor film is equal to or smaller than about 80 nm.
5. The thin film transistor according to claim 1 ,
wherein a thickness of said base interlayer film is equal to or smaller than about 400 nm.
6. The thin film transistor according to claim 1 ,
further comprising a black matrix disposed above an upper layer of said thin film transistor.
7. A thin film transistor comprising:
a transparent insulating substrate;
a lower light shielding film disposed above said transparent insulating substrate;
a base interlayer film disposed above said lower light shielding film;
a semiconductor film disposed above said base interlayer film;
roughness formed at an interface between said base interlayer and said semiconductor film;
a gate insulating film disposed above said semiconductor film; and
a gate electrode disposed above said gate insulating film,
wherein said roughness is equal to or larger than about 5 nm and equal to or smaller than about 40 nm.
8. The thin film transistor according to claim 7 ,
wherein said roughness is equal to or larger than about 5 nm and equal to or smaller than about 20 nm.
9. The thin film transistor according to claim 7 ,
wherein a thickness of said semiconductor film is equal to or smaller than about 80 nm.
10. The thin film transistor according to claim 7 ,
wherein a thickness of said base interlayer film is equal to or smaller than about 400 nm.
11. The thin film transistor according to claim 7 ,
further comprising a black matrix disposed above an upper layer of said thin film transistor.