Methods for forming pin alloy-semiconductor devices with rectifying junction contacts
View Patent ↗The present invention pertains to a more efficient system and method for forming rectifying junction contacts in PIN alloy-semiconductor devices using photoelectrical and chemical etching. The present invention provides a means of creating rectifying junction contacts on alloy-semiconductor devices such as CdTe and CdZnTe, among others. In addition, the present invention also provides a simple and low cost method for revealing wafer surface morphology of alloy-semiconductors, thus providing an efficient and effective means for selecting single grain semiconductor substrates. Further, the present invention provides radiation detectors employing such alloy-semiconductor devices having improved rectifying junctions as the detector element.
1. A method for forming a rectifying junction on an alloy-semiconductor material comprising a compound comprising a first component and a second component, the method comprising:
photo-electrochemical removal of the first component of a first portion of the alloy-semiconductor material to form an N-type region enriched in the second component; and
substantially removing the second component from a second portion of the alloy-semiconductor material to form a P-type region enriched in the first component.
2. The method according to claim 1 , wherein the step of removing the second component from a second portion of the alloy-semiconductor material comprises chemical etching.
3. The method according to claim 1 , wherein the alloy-semiconductor material is selected from the group consisting of CdTe, CdZnTe, HgZnCdTe, and HgCdZnSe.
4. The method according to claim 1 , further comprising the step of providing a contact on the P-type region to form a P-I-N rectifying junction.
5. The method of claim 4 , wherein the contact is selected from the group consisting of gold, tellurium, and platinum.
6. A method for forming a rectifying junction on an alloy-semiconductor material, the method comprising the steps of:
providing the alloy-semiconductor material having at least a first element and a second element, wherein the alloy-semiconductor has a first region and a second region substantially separated by an intermediate region;
substantially removing the first element from the first region, wherein the removal of the first element from the first region substantially forms a region of substantially enriched material of the second element, and wherein the removal of the first element from the first region substantially forms a negatively doped material in the first region to act as an N-type region;
substantially removing the second element of the second region, wherein the removal of the second element of the second region forms a positively doped material in the second region to act as a P-type region; and
providing a contact on the P-type region, wherein the N-type region, the intermediate region and the P-type region with the contact substantially form a P-I-N rectifying junction.
7. The method of claim 6 , wherein the removal of the first element occurs by photo-electrochemical removal.
8. The method of claim 6 , wherein the removal of the second element occurs by etching.
9. The method of claim 6 , wherein the contact is selected from the group consisting of gold, tellurium, or platinum.
10. The method of claim 9 , wherein the contact is provided with either vacuum deposited metal or electrodeless chemical exchange methods.
11. The method of claim 6 , wherein the alloy-semiconductor material is selected from the group consisting of CdTe, CdZnTe, HgZnCdTe, and HgCdZnSe.
12. A method for forming a rectifying junction on an alloy-semiconductor, the method comprising the steps of:
applying an N-type material on a first region of the alloy-semiconductor;
heating the N-type material on the alloy-semiconductor;
photo-electrochemical etching the N-type material;
substantially covering the N-type material for protection;
chemically etching a second region of the alloy-semiconductor to form P-type material; and
applying a contact to the P-type material to form a P-I-N rectifying junction.
13. The method of claim 12 , wherein the N-type material is removable and conductive.
14. The method of claim 13 , wherein the N-type material is Hg—In eutectic paste.
15. The method of claim 13 , wherein the photo-electrochemical etching comprises the steps of:
coating the N-type material with a non-conductive material;
submerging an electrode in an electrolyte solution;
connecting the electrode to a positive terminal of the power supply; and
applying a light source having a median energy approximate to the band gap of the alloy-semiconductor material.
16. The method of claim 12 , wherein the contact is selected from the group consisting of gold, tellurium, and platinum.