IP Library Granted Patent US 7,048,992
Granted Patent B2
US 7,048,992 · App. 10/760,875 · Granted May 23, 2006

Fabrication of Parascan tunable dielectric chips

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Quick Facts
Patent No.
US 7,048,992
App. No.
10/760,875
Granted
May 23, 2006
Kind
B2
Abstract

A tunable dielectric chip, and method of manufacture therefore, that comprises a dielectric substrate, the dielectric substrate patterned to a critical dimension, a metallized portion integral to the dielectric substrate, and an encapsulant covering an any portion of the dielectric substrate not covered by the metallized portion. A thin titanium layer can be deposited in between the metallized portion and the dielectric substrate to promote adhesion. The dielectric substrate can be a dielectric thick film. The thickness of the titanium can vary from 200A to 500A and the metallized portion integral to the dielectric substrate in a preferred embodiment is gold and varies in thickness from 3 um to several microns depending on the application. Further, in the present preferred embodiment, the encapsulant is a photo-definable encapsulant. The present invention also provides solder pads integral to the metallized portion enabling maximan protection from moisture and other contaminants. The metallized portion discussed above in a preferred embodiment is formed by cleaning the surface of the thick film tunable dielectric, applying a photoresist coating of a thin film metal to the thick film tunable dielectric, soft baking the thick film tunable dielectric with the thin film metal coated thereon, exposing the thick film tunable dielectric with the thin film metal coated thereon, post exposure baking the thick film tunable dielectric with the thin film metal coated thereon; and developing the thick film tunable dielectric with the thin film metal coated thereon.

Claims (10)

1. A tunable dielectric chip, comprising:

a dielectric substrate;

a metallized portion formed over said dielectric substrate;

a thin layer containing titanium is placed between said metallized portion and said dielectric substrate to promote adhesion to said dielectric substrate, wherein the thickness of said thin titanium layer varies from 200A to 500A; and

an encapsulant covering any portion of said dielectric substrate not covered by said metallized portion.

2. The tunable dielectric chip of claim 1 , wherein said dielectric substrate is a dielectric thick film.

3. The tunable dielectric chip of claim 1 , wherein said encapsulant's dimensions are capable of being defined by a photo definable process.

4. The tunable dielectric chip of claim 1 , further comprising solder pads integrally formed over said metallized portion enabling maximun protection from moisture and other contaminants.

5. The tunable dielectric chip of claim 1 , wherein said metallized portion varies in thickness from 3 to 7 microns.

6. The tunable dielectric chip of claim 5 , wherein said metallized portion is gold.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 5, 2020
From: BLACKBERRY LIMITED
To: NXP USA, INC.
Reel/Frame 052095/0443 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2013
From: RESEARCH IN MOTION RF, INC.
To: RESEARCH IN MOTION CORPORATION
Reel/Frame 030909/0908 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2013
From: RESEARCH IN MOTION CORPORATION
To: BLACKBERRY LIMITED
Reel/Frame 030909/0933 →
CHANGE OF NAME Recorded Jul 31, 2012
From: PARATEK MICROWAVE, INC.
To: RESEARCH IN MOTION RF, INC.
Reel/Frame 028686/0432 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 22, 2004
From: ZHANG, CHEN; KING, JOHN; CHIU, LUNA
To: PARATEK MICROWAVE, INC.
Reel/Frame 015590/0126 →