IP Library Granted Patent US 7,250,712
Granted Patent B2
US 7,250,712 · App. 10/761,742 · Granted Jul 31, 2007

Polymer sustained microelectrodes

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Quick Facts
Patent No.
US 7,250,712
App. No.
10/761,742
Granted
Jul 31, 2007
Kind
B2
Abstract

In one aspect, a microelectrode comprising an upper surface, two walls, and a polymer core is described, wherein each of the two walls forms an angle with a lower surface, and the upper surface and each of the two walls comprises a metal thin film in contact with the polymer core. The lower surface, however, lacks a continuous metal thin film. In another aspect, a microelectrode comprising a metal thin film is described in which the metal thin film has a thickness and a plane bisects the thickness. The plane forms an angle with a lower surface that lacks a contiuous metal thin film. The metal thin film is in contact with a supporting polymer having an upper surface that also lacks a continuous metal thin film.

Claims (27)

1. A microelectrode comprising an upper surface, two walls, and a polymer core, each of the two walls forming an angle with a lower surface, wherein the upper surface and each of the two walls comprise a metal thin film in contact with the polymer core, and the lower surface lacks a continuous metal thin film.

2. The microelectrode of claim 1 , wherein the polymer core comprises a linear polymer, a crosslinked polymer, an organically modified sol-gel, or any combination thereof.

3. The microelectrode of claim 1 , wherein the lower surface comprises silicon dioxide.

4. The microelectrode of claim 1 , wherein the lower surface comprises a polymer.

5. The microelectrode of claim 4 , wherein the lower surface comprises a linear polymer, a crosslinked polymer, an organically modified sol-gel, or any combination thereof.

6. The microelectrode of claim 1 , wherein the polymer core and the lower surface comprise the same polymer.

7. The microelectrode of claim 1 , wherein the upper surface and the lower surface are substantially parallel.

8. The microelectrode of claim 1 , wherein the angle between the two walls and the lower surface is about 90 degrees.

9. The microelectrode of claim 1 , wherein the metal thin film is selected from the group consisting of gold, platinum, titanium, and any combination thereof.

10. The microelectrode of claim 1 , wherein the metal thin film has a thickness of about 100 nm to about 5 μm.

11. The microelectrode of claim 1 , wherein the width of the upper surface is about 2 μm to about 500 μm and the height of the two walls is about 200 nm to about 10 μm.

12. The microelectrode of claim 11 , wherein the length of the microelectrode is about 2 μm to about 200 mm.

13. A microelectrode array, comprising the microelectrode of claim 1 .

14. The microelectrode array of claim 13 , wherein the microelectrodes are interdigitated.

15. A microelectrode comprising a metal thin film, the metal thin film having a thickness and a plane bisecting the thickness, the plane forming an angle with a lower surface, wherein: the metal thin film is in contact with a supporting polymer, the supporting polymer having an upper surface; the lower surface lacks a continuous metal thin film; and the upper surface lacks a continuous metal thin film.

16. The microelectrode of claim 15 , wherein the supporting polymer comprises a linear polymer, a crosslinked polymer, an organically modified sol-gel or any combination thereof.

17. The microelectrode of claim 15 , wherein the lower surface comprises silicon dioxide.

18. The microelectrode of claim 15 , wherein the lower surface comprises a polymer.

19. The microelectrode of claim 18 , wherein the lower surface comprises a linear polymer, a crosslinked polymer, an organically modified sol-gel, or any combination thereof.

20. The microelectrode of claim 15 , wherein the supporting polymer and the lower surface comprise the same polymer.

21. The microelectrode of claim 15 , wherein the angle between the plane bisecting the thickness and the lower surface is about 90 degrees.

22. The microelectrode of claim 15 , wherein the metal thin film is selected from the group consisting of gold, platinum, titanium, and any combination thereof.

23. The microelectrode of claim 15 , wherein the metal thin film has a thickness of about 100 nm to about 5 μm.

24. The microelectrode of claim 15 , wherein the width of the metal thin film is about 200 nm to about 10 μm.

25. The microelectrode of claim 15 , wherein the length of the microelectrode is about 2 μm to about 200 mm.

26. A microelectrode array, comprising the microelectrode of claim 15 .

27. The microelectrode array of claim 26 , wherein the microelectrodes are interdigitated.

Assignments (2)
SECURITY AGREEMENT Recorded Apr 15, 2011
From: LUMERA CORPORATION
To: SILICON VALLEY BANK
Reel/Frame 026179/0007 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 21, 2004
From: DINU, RALUCA; KRESSBACH, JEFFREY K.
To: LUMERA CORPORATION
Reel/Frame 014919/0488 →