Semiconductor memory device
View Patent ↗A semiconductor memory device has an external terminal receptive of a voltage for switching an operation mode. A protective transistor is connected between the external terminal and a ground. The protective transistor has a drain region and a gate electrode surrounding the drain region. A voltage detection circuit detects a voltage of the external terminal and outputs a switching signal for switching a first operation mode to a second operation mode when a value of the detected voltage is equal to or higher than a preselected voltage value.
1. A semiconductor memory device comprising:
an external terminal receptive of a voltage for switching an operation mode;
a protective transistor connected between the external terminal and a ground, the protective transistor having a drain region and a gate electrode surrounding the drain region; and
a voltage detection circuit for detecting a voltage of the external terminal and outputting a switching signal for switching a first operation mode to a second operation mode when a value of the detected voltage is equal to or higher than a preselected voltage value.
2. A semiconductor memory device according to claim 1 ; wherein the voltage detection circuit has a plurality of MOS transistors connected in series between the external terminal and the ground, one of the MOS transistors having a high breakdown voltage; and wherein the voltage detection circuit outputs the switching signal from a node in the serially connected MOS transistors.
3. A semiconductor memory device according to claim 1 ; wherein the voltage detection circuit has a first NMOS transistor having a drain connected to the protective transistor, a first PMOS transistor connected to a source of the first NMOS transistor, a second PMOS transistor connected to a drain of the first PMOS transistor, and a second NMOS transistor connected to a drain of the second PMOS transistor.
4. A semiconductor memory device according to claim 3 ; wherein the first NMOS transistor has a high breakdown voltage.
5. A semiconductor memory device according to claim 4 ; wherein the protective transistor comprises a MOS transistor having a low breakdown voltage.
6. A semiconductor memory device comprising:
an external terminal receptive of a voltage for switching between first and second operation modes of the semiconductor memory device;
a protective transistor connected directly to the external terminal and having a drain region and a gate electrode surrounding the drain region for suppressing a terminal leak current in at least one of the first and second operation modes; and
a voltage detection circuit for detecting a voltage of the external terminal and outputting a switching signal for switching from the first operation mode to the second operation mode.
7. A semiconductor memory device according to claim 6 ; wherein the voltage detection circuit has a plurality of MOS transistors connected in series between the external terminal and a ground, one of the MOS transistors having a high breakdown voltage; and wherein the voltage detection circuit outputs the switching signal from a node in the serially connected MOS transistors.
8. A semiconductor memory device according to claim 6 ; wherein the voltage detection circuit has a first NMOS transistor having a drain connected to the protective transistor, a first PMOS transistor connected to a source of the first NMOS transistor, a second PMOS transistor connected to a drain of the first PMOS transistor, and a second NMOS transistor connected to a drain of the second PMOS transistor.
9. A semiconductor memory device according to claim 8 ; wherein the first NMOS transistor has a high breakdown voltage.
10. A semiconductor memory device according to claim 9 ; wherein the protective transistor comprises a MOS transistor having a low breakdown voltage.
11. A semiconductor memory device comprising:
an external terminal receptive of a voltage for switching an operation mode;
a protective transistor connected between the external terminal and a ground, the protective transistor having a drain region and a gate electrode disposed in overlapping relation with an end of the drain region; and
a voltage detection circuit for detecting a voltage of the external terminal and outputting a switching signal for switching a first operation mode to a second operation mode when a value of the detected voltage is equal to or higher than a preselected voltage value.
12. A semiconductor memory device according to claim 11 ; wherein the voltage detection circuit has a plurality of MOS transistors connected in series between the external terminal and a ground, one of the MOS transistors having a high breakdown voltage; and wherein the voltage detection circuit outputs the switching signal from a node in the serially connected MOS transistors.
13. A semiconductor memory device according to claim 11 ; wherein the voltage detection circuit has a first NMOS transistor having a drain connected to the protective transistor, a first PMOS transistor connected to a source of the first NMOS transistor, a second PMOS transistor connected to a drain of the first PMOS transistor, and a second NMOS transistor connected to a drain of the second PMOS transistor.
14. A semiconductor memory device according to claim 13 ; wherein the first NMOS transistor has a high breakdown voltage.
15. A semiconductor memory device according to claim 14 ; wherein the protective transistor comprises a MOS transistor having a low breakdown voltage.