Method of manufacturing a semiconductor integrated circuit and semiconductor integrated circuit
View Patent ↗A semiconductor integrated circuit has a CMOS transistor formed on a first conductivity type semiconductor film provided on a first conductivity type supporting substrate through an embedded insulating film. Thermal oxidation is conducted to form a LOCOS for element separation between transistors in the semiconductor film. A gate oxide film of a second conductivity type transistor is formed over the insulating film. A first conductivity type impurity region is formed between the gate oxide film and the embedded insulating film in a region where the second conductivity type transistor is to be formed. A first conductivity type impurity region having a higher density than that of the first conductivity type impurity region is formed in a middle depth portion of the semiconductor film serving as the proximal region to a drain in the first conductivity type impurity region. A polysilicon film is formed on the gate oxide film and etching the polysilicon film so as to form a gate electrode of the second conductivity type transistor. Ion implantation is performed through the gate electrode so as to form a second conductivity type impurity region in each of a source region and a drain region.
1. A method of manufacturing a semiconductor integrated circuit in which a CMOS transistor is formed on a first conductivity type semiconductor film provided on a first conductivity type supporting substrate through an embedded insulating film, comprising the steps of:
conducting thermal oxidation to form a LOCOS for element separation between transistors in the semiconductor film;
forming a gate oxide film of a second conductivity type transistor;
forming a first conductivity type impurity region between the gate oxide film and the embedded insulating film in a region where the second conductivity type transistor is to be formed;
forming a polysilicon film on the gate oxide film and etching the polysilicon film so as to form a gate electrode of the second conductivity type transistor;
forming a second conductivity type impurity region in an ultra-shallow portion of each of a source region and a drain region;
forming a second conductivity type impurity region having a low density in a middle portion of each of the source region and the drain region;
forming a second conductivity type impurity region having the same density as the second conductivity type impurity region in the ultra-shallow portion in a lower portion of each of the source region and the drain region; and
providing resist as a mask on a part of the source region and the drain region adjacent to the gate electrode, and further performing ion implantation so as to form a second conductivity type impurity region in each of the source region and the drain region.
2. A method of manufacturing a semiconductor integrated circuit in which a CMOS transistor is formed on a first conductivity type semiconductor film provided on a first conductivity type supporting substrate through an embedded insulating film, comprising the steps of:
conducting thermal oxidation to form a LOCOS for element separation between transistors in the semiconductor film;
forming a gate oxide film of a second conductivity type transistor;
forming a first conductivity type impurity region between the gate oxide film and the embedded insulating film in a region where the second conductivity type transistor is to be formed;
forming a first conductivity type impurity region having a higher density than that of the first conductivity type impurity region in a middle depth portion of the semiconductor film serving as the proximal region to a drain in the first conductivity type impurity region;
forming a polysilicon film on the gate oxide film and etching the polysilicon film so as to form a gate electrode of the second conductivity type transistor; and
performing ion implantation through the gate electrode so as to form a second conductivity type impurity region in each of a source region and a drain region.