Semiconductor device
View Patent ↗A semiconductor device includes: a wiring board; a first semiconductor chip, which has a circuitry side and a non-circuitry side that face each other vertically and which is electrically connected to the wiring board via a raised electrode, the circuitry side of the first chip facing the principal surface of the wiring board; and a second semiconductor chip, which has a circuitry side and a non-circuitry side that face each other vertically and which includes an external electrode on the circuitry side thereof. The non-circuitry sides of the first and second semiconductor chips are secured to each other. The external electrode of the second semiconductor chip is connected to the wiring board via a metal fine wire. The external and raised electrodes are so disposed as not to overlap each other as viewed vertically downward from over the principal surface of the wiring board.
1. A semiconductor device comprising:
a wiring board;
a first semiconductor chip and a second semiconductor chip, each of which has a circuitry side and a non-circuitry side that face each other vertically and each of which is electrically connected to the wiring board via raised electrodes, the circuitry side of the first and second chips facing the principal surface of the wiring board; and
a third semiconductor chip, which has a circuitry side and a non-circuitry side that face each other vertically and which includes external electrodes on the circuitry side thereof,
wherein the non-circuitry side of the third semiconductor chip is secured to the non-circuitry side of the first semiconductor chip and the non-circuitry side of the second semiconductor chip,
wherein the external electrodes of the third semiconductor chip are connected to the wiring board via metal fine wires, and
wherein the external electrodes are disposed so as not to overlap with the raised electrodes.
2. The device of claim 1 , wherein the first semiconductor chip, the second semiconductor chip and third semiconductor chip have a thickness of 300 μm or lower.
3. The device of claim 1 , wherein the external electrodes are provided on the inner side of the second semiconductor chip and the third semiconductor chip with respect to the raised electrodes.
4. The device of claim 1 , wherein the raised electrodes and the wiring board are secured to each other with a conductive adhesive.
5. The device of claim 1 , wherein the raised electrodes and the wiring board are secured to each other with a low-melting metal.
6. The device of claim 1 , wherein the raised electrodes are in direct contact with the principle surface of the wiring board.
7. The device of claim 1 , wherein the first semiconductor chip, the second semiconductor chip and third semiconductor chip are LSI chips.
8. The device of claim 7 , wherein the combination of chips is a logic chip and a memory chip.
9. The device of claim 1 , wherein a width of the third semiconductor chip is narrower than a distance between a lateral face of the first semiconductor chip and a lateral face of the second semiconductor chip that are furthest apart from each other among lateral faces of the first and second semiconductor chips.