Method of manufacturing a semiconductor device and apparatus for manufacturing a semiconductor device
View Patent ↗Precision in an etching process is to be improved. A detecting unit 404 detects a variation of plasma emission intensity at a plurality of wavelengths (an emission band having an intensity peak in the proximity of 358 nm and an emission band having an intensity peak in the proximity of 387 nm) during a dry etching process being performed on either of a nitrogen-containing film formed on a semiconductor substrate or a non-nitrogen film provided in direct contact with the nitrogen-containing film in an etching apparatus 402. An arithmetic processing unit 406 performs calculation based on detected variation. A control unit 410 determines an endpoint of the dry etching process in consideration of the calculation result.
1. A method of manufacturing a semiconductor device, comprising:
forming a film on a semiconductor substrate;
performing a dry etching process for removing said film while monitoring a plasma emission at a plurality of wavelengths;
wherein said performing said dry etching process includes determining an endpoint of said dry etching process based on a change of luminous intensity obtained by a correlation of a plurality of luminous intensities of the plasma emission at said plurality of wavelengths wherein the correlation includes a ratio of the plurality of luminous intensities that grants a greater weight to the luminous intensity of one of the plurality of wavelengths than that of another of the plurality of wavelengths.
2. The method as set forth in claim 1 , wherein said film contains nitrogen.
3. The method as set forth in claim 1 , wherein said film contains one of SiCN and SiON.
4. The method as set forth in claim 1 , wherein said film is an insulating film provided on another film containing nitrogen in direct contact therewith.
5. The method as set forth in claim 1 , wherein said film is an insulating film provided on another film containing one of SiCN and SiON in direct contact therewith.
6. The method as set forth in claim 4 , wherein said insulating film does not contain nitrogen.
7. The method as set forth in claim 5 , wherein said insulating film does not contain nitrogen.
8. The method as set forth in claim 1 , wherein said plurality of different wavelengths is an emission band having a luminous intensity peak in the proximity of 358 nm and in an emission band having a luminous intensity peak in the proximity of 387 nm.
9. A method of manufacturing a semiconductor device including a nitrogen-containing film formed on a semiconductor substrate and a film formed on said nitrogen-containing film in direct contact therewith, comprising:
performing a dry etching process for removing said film at least until reaching an interface with said nitrogen-containing film while monitoring plasma emission at a plurality of wavelengths;
wherein said performing said dry etching process includes determining an endpoint based on a change of luminous intensity obtained by a correlation of a plurality of luminous intensities of the plasma emission at said plurality of wavelengths wherein the correlation includes a ratio of the plurality of luminous intensities that grants a greater weight to the luminous intensity of one of the plurality of wavelengths than that of another of the plurality of wavelengths.
10. A method of manufacturing a semiconductor device including a film formed on a semiconductor substrate and a nitrogen-containing film formed on said film in direct contact therewith, comprising:
performing a dry etching process for removing said nitrogen-containing film at least until reaching an interface with said film while monitoring plasma emission at a plurality of wavelengths;
wherein said performing said dry etching process includes determining an endpoint based on a change of luminous intensity obtained by a correlation of a plurality of luminous intensities of the plasma emission at said plurality of wavelengths wherein the correlation includes a ratio of the plurality of luminous intensities that grants a greater weight to the luminous intensity of one of the plurality of wavelengths than that of another of the plurality of wavelengths.
11. The method as set forth in claim 9 , wherein said film does not contain nitrogen.
12. The method as set forth in claim 10 , wherein said film does not contain nitrogen.
13. A method of manufacturing a semiconductor device, comprising the steps of:
forming a film on a substrate;
starting a dry etching of the film in a dry etching system;
monitoring a plasma emission from the dry etching system;
detecting an endpoint of the dry etching based on a correlation of intensities of the monitored plasma emission at predetermined wavelengths; and
ending the dry etching of the film,
wherein intensities of at least two wavelengths are monitored at said monitoring the plasma emission wherein the correlation includes a ratio of the plurality of luminous intensities that grants a greater weight to the luminous intensity of one of the plurality of wavelengths than that of another of the plurality of wavelengths.
14. The method as set forth in claim 1 , wherein the correlation includes a total of the plurality of luminous intensities.