Semiconductor device and method of manufacturing the same
View Patent ↗There is provided a method of manufacturing a semiconductor device in which interconnect capacitance is restrained. The semiconductor device 200 comprises a semiconductor substrate; a second interconnect insulating film 216 constituted of a ladder-type hydrogen siloxane formed on the semiconductor substrate; a second protection film 217 provided on the second interconnect insulating film 216; and an upper interconnect 270 formed in the second interconnect insulating film 216 and the second protection film 217 . The second interconnect insulating film 216 is constituted of for example an L-Ox™ (trademark) film, and the second protection film 217 is constituted of for example a silicon oxide film.
1. A semiconductor device, comprising:
a semiconductor substrate;
a low dielectric constant film constituted essentially of a ladder-type hydrogen siloxane provided on said semiconductor substrate wherein said ladder-type hydrogen siloxane has a refractive index not less than 1.38 but not greater than 1.40 at a wavelength of 633 nm;
a protection film provided on said low dielectric constant film; and
a metal interconnect formed in said low dielectric constant film and said protective film.
2. A semiconductor device, comprising:
a semiconductor substrate;
a low dielectric constant film constituted essentially of a ladder-type hydrogen siloxane provided on said semiconductor substrate wherein said ladder-type hydrogen siloxane has a density not less than 1.50 g/cm 3 but not greater than 1.58 g/cm 3 ;
a protection film provided on said low dielectric constant film; and
a metal interconnect formed in said low dielectric constant film and said protective film.
3. A semiconductor device. comprising:
a semiconductor substrate;
a low dielectric constant film consisting essentially of a ladder-type hydrogen siloxane provided on said semiconductor substrate;
a protection film consisting essentially of a silicon oxide film provided on said low dielectric constant film; and
a metal interconnect formed in said low dielectric constant film and said protective film;
wherein a plurality of said metal interconnects is provided so as to form an isolated region where one of said plurality of metal interconnects is separately located and a concentrated region where the other metal interconnects are closely disposed to one another.
4. A semiconductor device, comprising:
a semiconductor substrate;
a low dielectric constant film constituted essentially of a ladder-type hydrogen siloxane provided on said semiconductor substrate;
a protection film provided on said low dielectric constant film; and
a plurality of metal interconnects formed in said low dielectric constant film and said protective film wherein said plurality of metal interconnects is provided so as to form an isolated region where one of said plurality of metal interconnects is separately located and a concentrated region where the other metal interconnects are closely disposed to one another, and
wherein said plurality of metal interconnects in the concentrated region is disposed such that an interval between substantially parallel portions of neighboring metal interconnects is not greater than a double of a width of the respective metal interconnects.
5. A semiconductor device, comprising:
a semiconductor substrate;
a low dielectric constant film constituted essentially of a ladder-type hydrogen siloxane provided on said semiconductor substrate;
a protection film provided on said low dielectric constant film wherein said protection film is formed such that a film thickness thereof at its thickest portion is in a range of 10% to 30% of a film thickness of said low dielectric constant film at its thickest portion; and
a metal interconnect formed in said low dielectric constant film and said protective film.
6. A semiconductor device, comprising:
a semiconductor substrate;
a low dielectric constant film consisting essentially of a ladder-type hydrogen siloxane provided on said semiconductor substrate;
a protection film consisting essentially of a silicon oxide film provided on said low dielectric constant film; and
a metal interconnect formed in said low dielectric constant film and said protective film;
wherein said ladder-type hydrogen siloxane has a refractive index not less than 1.38 but not greater than 1.40 at a wavelength of 633 nm.
7. A semiconductor substrate;
a low dielectric constant film consisting essentially of a ladder-type hydrogen siloxane provided on said semiconductor substrate;
a protection fitm consisting essentially of a silicon oxide film provided on said low dielectric constant film; and
a metal interconnect formed in said low dielectric constant film and said protective film;
wherein said ladder-type hydrogen siloxane has a density not less than 1.50 g/cm 3 but not greater than 1.58 g/cm 3 .
8. A semiconductor substrate;
a low dielectric constant film consisting essentially of a ladder-type hydrogen siloxane provided on said semiconductor substrate;
a protection film consisting essentially of a silicon oxide film provided on said low dielectric constant film; and
a metal interconnect formed in said low dielectric constant film and said protective film;
wherein a plurality of said metal interconnects is provided so as to form an isolated region where one of said plurality of metal interconnects is separately located and a concentrated region where the other metal interconnects are closely disposed to one another; and
said plurality of metal interconnects in the concentrated region is disposed such that an interval between substantially parallel portions of neighboring metal interconnects is not greater than a double of a width of the respective metal interconnects.
9. A semiconductor substrate;
a low dielectric constant film consisting essentially of a ladder-type hydrogen siloxane provided on said semiconductor substrate;
a protection film consisting essentially of a silicon oxide film provided on said low dielectric constant film; and
a metal interconnect formed in said low dielectric constant film and said protective film;
wherein said protection film is formed such that a film thickness thereof at its thickest portion is in a range of 10% to 30% of a film thickness of said low dielectric constant film at its thickest portion.