Magnetoresistive read head having a bias structure with at least one dusting layer
View Patent ↗A magnetoresistive read head includes a magnetoresistive sensor and a bias structure adjacent to the magnetoresistive sensor. The bias structure provides a magnetostatic bias field for the magnetoresistive sensor. The bias structure includes an underlayer, a bias layer over the underlayer, and at least one dusting layer directly below at least one of the underlayer or the bias layer.
1. A magnetoresistive read head comprising:
a magnetoresistive sensor stack; and
a bias structure adjacent to the magnetoresistive sensor stack, the bias structure providing a magnetostatic bias field for the magnetoresistive sensor stack, the bias structure comprising:
an underlayer;
a bias layer over the underlayer; and
at least one dusting layer directly below at least one of the underlayer or the bias layer and between the bias layer and the magnetoresistive sensor stack, the dusting layer comprising discontinuous, nano-sized islands.
2. The magnetoresistive read head of claim 1 , wherein the dusting layer is directly below the underlayer.
3. The magnetoresistive read head of claim 1 , wherein the dusting layer comprises a material having a sufficiently high surface energy and sufficiently low atomic mobility to form the islands.
4. The magnetoresistive read head of claim 2 , wherein the dusting layer is formed by ion-beam deposition.
5. The magnetoresistive read head of claim 2 , wherein the dusting layer comprises a material having a body-centered-cubic crystallographic structure or a CsCl-type crystallographic structure.
6. The magnetoresistive read head of claim 2 , wherein the dusting layer comprises a material selected from a group consisting of tungsten, tantalum, niobium, rhodium, molybdenum, tungsten-titanium alloy, tungsten-chromium alloy, and nickel-aluminum alloy.
7. The magnetoresistive read head of claim 2 , wherein the dusting layer comprises platinum or titanium.
8. The magnetoresistive read head of claim 2 , wherein the dusting layer comprises a material having a melting temperature above a melting temperature of the underlayer.
9. The magnetoresistive read head of claim 2 , wherein the dusting layer comprises a material having a melting temperature above 1800 degrees Celsius.
10. The magnetoresistive read head of claim 2 , wherein the dusting layer has a thickness less than approximately 10 Angstroms.
11. The magnetoresistive read head of claim 2 , wherein the dusting layer has a thickness in a range from approximately 2 Angstroms to approximately 6 Angstroms.
12. The magnetoresistive read head of claim 2 , wherein the dusting layer has a thickness of approximately 3 Angstroms.
13. The magnetoresistive read head of claim 1 , wherein the dusting layer is directly below the bias layer.
14. The magnetoresistive read head of claim 13 , wherein the dusting layer comprises a material having a sufficiently high surface energy and sufficiently low atomic mobility to form the islands.
15. The magnetoresistive read head of claim 13 , wherein the dusting layer is formed by ion-beam deposition.
16. The magnetoresistive read head of claim 13 , wherein the dusting layer comprises a material having a body-centered-cubic crystallographic structure or a CsCl-type crystallographic structure.
17. The magnetoresistive read head of claim 13 , wherein the dusting layer comprises a material selected from a group consisting of tungsten, tantalum, niobium, rhodium, molybdenum, tungsten-containing alloy, chromium-containing alloy, tungsten-titanium alloy, tungsten-chromium alloy, and nickel-aluminum alloy.
18. The magnetoresistive read head of claim 13 , wherein the dusting layer comprises a material having a melting temperature above a melting temperature of the underlayer.
19. The magnetoresistive read head of claim 13 , wherein the dusting layer comprises a material having a melting temperature above 1800 degrees Celsius.
20. The magnetoresistive read head of claim 13 , wherein the dusting layer has a thickness less than approximately 10 Angstroms.
21. The magnetoresistive read head of claim 13 , wherein the dusting layer has a thickness in a range from approximately 5 Angstroms to approximately 10 Angstroms.
22. The magnetoresistive read head of claim 13 , wherein the dusting layer has a thickness of approximately 7 Angstroms.
23. The magnetoresistive read head of claim 1 , wherein the at least one dusting layer comprises a first dusting layer directly below the underlayer and a second dusting layer directly below the bias layer.
24. The magnetoresistive read head of claim 1 , wherein the magnetoresistive sensor stack is selected from a group consisting of a giant magnetoresistive (GMR) sensor, an anisotropic magnetoresistive (AMR) sensor, a tunneling magnetoresistive (TMR) sensor, a spin-dependent-tunneling (SDT) sensor, a spin valve (SV) sensor, a current-in-plane (CIP) sensor, and a current-perpendicular-to-the-plane (CPP) sensor.
25. The magnetoresistive read head of claim 1 , wherein the magnetoresistive sensor stack is located over an aluminum oxide layer on a silicon substrate.
26. The magnetoresistive read head of claim 1 , wherein the underlayer comprises a material selected from a group consisting of chromium, chromium-containing alloy, tungsten, tungsten-containing alloy, nickel-aluminum alloy, and iron-aluminum alloy.
27. The magnetoresistive read head of claim 26 , wherein the underlayer comprises a chromium-containing alloy and the chromium-containing alloy comprises a material selected from a group consisting of titanium, vanadium, molybdenum, manganese, and tungsten.
28. The magnetoresistive read head of claim 26 , wherein the underlayer comprises a tungsten-containing alloy and the tungsten-containing alloy comprises a material selected from a group consisting of chromium, titanium, vanadium, and molybdenum.
29. The magnetoresistive read head of claim 1 , wherein the underlayer has a thickness in a range from approximately 20 Angstroms to approximately 250 Angstroms.
30. The magnetoresistive read head of claim 1 , wherein the underlayer has a thickness in a range from approximately 70 Angstroms to approximately 200 Angstroms.
31. The magnetoresistive read head of claim 1 , wherein the bias layer comprises a material selected from a group consisting of CoPt, CoCrPt, CoCrPtTa, CoCrPtB, CrPt, and FePt.
32. The magnetoresistive read head of claim 1 , wherein the bias layer has a thickness in a range from approximately 75 Angstroms to approximately 300 Angstroms.
33. The magnetoresistive read head of claim 1 , wherein the bias layer has a thickness in a range from approximately 100 Angstroms to approximately 250 Angstroms.
34. The magnetoresistive read head of claim 1 , further comprising an electrically conductive lead layer over the bias layer.
35. The magnetoresistive read head of claim 34 , wherein the lead layer comprises a material selected from a group consisting of gold, tungsten, rhodium, chromium, and copper.
36. The magnetoresistive read head of claim 34 , wherein the lead layer has a thickness in a range from approximately 100 Angstroms to approximately 1000 Angstroms.