Method of fabricating semiconductor device with capacitor covered by a TEOS-03 film

1. A method of fabricating a semiconductor device comprising the steps of:

forming, on a semiconductor substrate, a capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode;

forming a protection film on said semiconductor substrate over said capacitor;

forming, on said protection film, a first TEOS-O3 film through first TEOS-O3 CVD where an ozone concentration is relatively low; and

forming, on said first TEOS-O3 film, a second TEOS-O3 film through second TEOS-O3 CVD where the ozone concentration is relatively high.

2. The method of fabricating a semiconductor device of claim 1 , further comprising, between the step of forming said protection film and the step of forming said first TEOS-O3 film, a step of forming a hydrophobic primer layer on a surface of said protection film by supplying a hydrophobic primer agent onto said protection film.

3. The method of fabricating a semiconductor device of claim 2 , wherein said primer agent is hexamethyldisilazane.

4. The method of fabricating a semiconductor device of claim 1 , further comprising, between the step of forming said protection film and the step of forming said first TEOS-O3 film, a step of forming, on said protection film, an underlying oxide film from a silicon oxide film including no impurity or a silicon oxide film including at least one of boron and phosphorus.

5. The method of fabricating a semiconductor device of claim 4 , further comprising, between the step of forming said underlying oxide film and the step of forming said first TEOS-O3 film, a step of forming a hydrophobic primer layer on a surface of said underlying oxide film by supplying a hydrophobic primer agent onto said underlying oxide film.

6. The method of fabricating a semiconductor device of claim 5 ,

wherein said primer agent is hexamethyldisilazane.

7. The method of fabricating a semiconductor device of claim 1 ,

wherein the ozone concentration in the first TEOS-O3 CVD is 25 g/m3 or less and the ozone concentration in the second TEOS-O3 CVD is 130 g/m3 or more.

8. The method of fabricating a semiconductor device of claim 7 ,

wherein the second TEOS-O3 CVD is carried out at a temperature of 350° C. through 450° C.

9. The method of fabricating a semiconductor device of claim 1 ,

wherein the first TEOS-O3 CVD is carried out with a value of (a flow rate of ozone/a flow rate of TEOS) set to 3 or less, and

the second TEOS-O3 CVD is carried out with the value of (a flow rate of ozone/a flow rate of TEOS) set to 15 or more.

10. The method of fabricating a semiconductor device of claim 1 ,

wherein said second TEOS-O3 film has tensile stress of 1×102 N/cm2 through 4×104 N/cm2.

11. The method of fabricating a semiconductor device of claim 1 , further comprising a step of conducting a plasma treatment on a surface of said second TEOS-O3 film.

12. The method of fabricating a semiconductor device of claim 11 ,

wherein said plasma treatment is plasma coating or plasma sputtering etching using plasma of a gas including at least one of a N2 gas, a NH3 gas, a N2O gas, an O2 gas, an Ar gas, a Cl2 gas and a C2F6 gas.

13. The method of fabricating a semiconductor device of claim 1 , further comprising a step of forming a silicon nitride layer on a surface of said second TEOS-O3 film by conducting a plasma treatment on said second TEOS-O3 film.

14. The method of fabricating a semiconductor device of claim 1 ,

wherein said protection film is a silicon oxide film including no impurity or a silicon oxide film including at least one of boron and phosphorus formed by TEOS-O3 CVD.

15. A method of fabricating a semiconductor device comprising the steps of:

forming, on a semiconductor substrate, a capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode;

forming a protection film on said semiconductor substrate over said capacitor;

forming, on said protection film, an underlying oxide film from a silicon oxide film including no impurity or a silicon oxide film including at least one of boron and phosphorus; and

forming a TEOS-O3 film on said underlying oxide film.

16. The method of fabricating a semiconductor device of claim 15 ,

wherein said protection film is a silicon oxide film including no impurity or a silicon oxide film including at least one of boron and phosphorus formed by TEOS-O3 CVD.

17. The method of fabricating a semiconductor device of claim 15 , further comprising, between the step of forming said underlying oxide film and the step of forming said TEOS-O3 film, a step of forming a hydrophobic primer layer on a surface of said underlying oxide film by supplying a hydrophobic primer agent onto said underlying oxide film.

18. The method of fabricating a semiconductor device of claim 17 , wherein said primer agent is hexamethyldisilazane.

19. The method of fabricating a semiconductor device of claim 15 ,

wherein said TEOS-O3 film is formed through TEOS-O3 CVD where an ozone concentration is 130 g/m3 or more.

20. The method of fabricating a semiconductor device of claim 15 ,

wherein said TEOS-O3 film is formed through TEOS-O3 CVD where a value of (a flow rate of ozone/a flow rate of TEOS) is set to 15 or more.

21. The method of fabricating a semiconductor device of claim 15 , further comprising a step of conducting a plasma treatment on a surface of said TEOS-O3 film.

22. The method of fabricating a semiconductor device of claim 21 ,

wherein said plasma treatment is plasma coating or plasma sputtering etching using plasma of a gas including at least one of a N2 gas, a NH3 gas, a N2O gas, an O2 gas, an Ar gas, a Cl2 gas and a C2F6 gas.

23. The method of fabricating a semiconductor device of claim 15 , further comprising a step of forming a silicon nitride layer on a surface of said TEOS-O3 film by conducting a plasma treatment on said TEOS-O3 film.