IP Library Granted Patent US 7,473,476
Granted Patent B2
US 7,473,476 · App. 10/770,955 · Granted Jan 6, 2009

Soldering method, component to be joined by the soldering method, and joining structure

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Quick Facts
Patent No.
US 7,473,476
App. No.
10/770,955
Granted
Jan 6, 2009
Kind
B2
Abstract

It is possible to prevent deterioration of a soldering portion and improve strength of thermal fatigue resistance by providing barrier metal layers on at least one of lead and land to cover parent materials comprising Cu-containing materials, feeding a soldering material between the lead and the land and allowing to contact in a fused condition with barrier metal layers and solidify, and thus soldering together the lead and the land.

Claims (26)

1. A joined structure, comprising; first and second members, the first member comprising Cu;

a soldering material comprising Sn and Zn between the first and second members; and

a layer comprising an Au-Zn compound between the first member and the soldering material, the Au-Zn compound being formed in a layer state,

wherein there is no elution or fusion diffusion of the Au into the soldering material.

2. The joined structure of claim 1 , wherein a thickness of the layer comprising the Au—Zn compound in a layer state is about 0.01 to about 0.1 μm.

3. The joined structure of claim 1 , further comprising a barrier metal layer between the first member and the layer comprising an Au—Zn compound in a layer state.

4. The joined structure of claim 3 , wherein the barrier metal layer comprises Ni.

5. The joined structure of claim 3 , wherein the barrier metal layer comprises a Ni layer and an Au layer, the Ni layer being adjacent to the first member.

6. The joined structure of claim 1 , wherein the second member comprising Cu, and the structure further comprises a second layer comprising an Au—Zn compound between the second member and the soldering material, the Au—Zn compound being a layer state, not a granular state.

7. The joined structure of claim 6 , wherein a thickness of the second layer comprising the Au-Zn compound in a layer state is about 0.01 to about 0.1 μm.

8. The joined structure of claim 6 further comprising at least one of a first barrier metal layer between the first member and the layer comprising an Au—Zn compound or a second barrier metal layer between the second member and the second layer comprising an Au—Zn compound, the Au—Zn compounds being a layer state, not a granular state.

9. The joined structure of claim 8 , wherein the first and second barrier metal layers comprise Ni.

10. The joined structure of claim 8 , wherein the first and second barrier metal layers comprise Ni layers and Au layers, the Ni layers being adjacent to the first and second members, respectively.

11. A joined structure; comprising; a lead of an electronic component and a land on a board, the land comprising Cu;

a soldering material comprising Sn and Zn between the lead and land;

a layer comprising an Au—Zn compound between the land and the soldering material, the Au—Zn compound being formed in a layer state,

wherein there is no elution or fusion diffusion of the Au into the soldering material.

12. The joined structure of claim 11 , wherein a thickness of the layer comprising the Au—Zn compound in a layer state is about 0.01 to about 0.1 μm.

13. The joined structure of claim 12 further comprising a barrier metal layer between the land and the layer comprising the Au—Zn compound in a layer state.

14. The joined structure of claim 13 , wherein the barrier metal layer comprises Ni.

15. The joined structure of claim 13 , wherein the barrier metal layer comprises a Ni layer and an Au layer, the Ni layer being adjacent to the land.

16. The joined structure of claim 11 , wherein the lead comprises Cu, and the structure further comprises a second layer comprising an Au—Zn compound between the lead and the soldering material, the Au—Zn compound being a layer state, not a granular state.

17. The joined structure of claim 16 , wherein a thickness of the second layer comprising the Au—Zn compound in a layer state is about 0.01 to about 0.1 μm.

18. The joined structure of claim 16 further comprising a first barrier metal layer between the land and the layer comprising the Au—Zn compound and a second barrier metal layer between the lead and the second layer comprising the Au—Zn compound.

19. The joined structure of claim 18 , wherein the barrier metal layers comprise Ni.

20. The joined structure of claim 18 , wherein the barrier metal layers comprise Ni layers and Au layers, the Ni layers being adjacent to the land and lead, respectively.

Assignments (2)
CHANGE OF NAME Recorded Nov 24, 2008
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 021897/0653 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 3, 2004
From: YAMAGUCHI, ATSUSHI; NISHIDA, KAZUTO; HIRANO, MASATO
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 014958/0769 →