Semiconductor device
View Patent ↗An object is to reduce noise superimposed upon a signal carried on an interconnection or cross-talk. Dummy interconnections ( 9, 21 and 25 ) are formed in the same layers respectively as interconnections ( 8, 19 and 28 ) formed in a plurality of layers. The dummy interconnections ( 9, 21 and 25 ) are connected through dummy plugs ( 22 and 26 ). At least the dummy interconnections ( 9 a, 21 a, 21 c and 25 a ) and the dummy plugs ( 22 a, 26 a and 26 c ) are fixed at a ground potential.
1. A semiconductor device comprising:
a semiconductor substrate having a main surface in which an element isolation structure for isolating said main surface into a plurality of regions is selectively formed, each of said plurality of regions having a semiconductor element formed therein;
interlayer insulating films formed on said main surface;
conductive interconnections provided in a plurality of layers separated by said interlayer insulating films;
conductive dummy interconnections provided in the same layers as said interconnections in two or more layers included in said plurality of layers;
a conductive dummy plug selectively buried in said interlayer insulating films to connect said dummy interconnections between said two or more layers;
a conductive layer formed in a part of said element isolation structure; and
another conductive plug selectively buried in said interlayer insulating films to connect said conductive layer and said dummy interconnections.
2. The semiconductor device according to claim 1 , wherein said dummy interconnections and said dummy plug are connected to a stable potential line which is included in said interconnections and which holds a constant potential with respect to a potential carried on a lower-potential power-supply line or a higher-potential power-supply line.
3. The semiconductor device according to claim 2 , wherein said plurality of regions correspond to a plurality of functional blocks in an integrated circuit, and
each of said plurality of functional blocks is surrounded by said conductive layer together with said element isolation structure.
4. The semiconductor device according to claim 1 , wherein a trench is formed in part of said element isolation structure and said conductive layer is buried in said trench.
5. The semiconductor device according to claim 1 , wherein said semiconductor substrate further comprises a buried insulating layer,
said element isolation structure comprises a part connected to said buried insulating layer, and
said conductive layer selectively extends through said part of said element isolation structure to reach said buried insulating layer.