Laser diode and manufacturing method thereof
View Patent ↗Laser diodes containing aluminum at high concentration in an active layer have been usually suffered from remarkable facet deterioration along with laser driving operation and it has been difficult for the laser diodes to attain high reliability. An aluminum oxide film lacking in oxygen is formed adjacent to the semiconductor on an optical resonator facet, by which facet deterioration can be minimized and, accordingly, the laser diode can be operated with no facet deterioration at high temperature for long time and a laser diode of high reliability can be manufactured at a reduced cost.
1. A method of manufacturing a horizontal optical resonator type laser diode having an optical resonator horizontal with respect to a substrate surface comprising the steps of:
providing a substrate of a semiconductor;
forming an active layer inside the semiconductor;
forming an optical resonator mirror on a facet of the semiconductor; and
forming a first insulator film in contact with said facet of the semiconductor as the optical resonator mirror and forming a reflection film formed by depositing a second insulator film on the first insulator film;
wherein the first insulator film comprises aluminum oxide lacking in oxygen and the composition of an aluminum oxide is Al 2 O 3-x where 0.03≦x≦0.3.
2. A method of manufacturing a laser diode according to claim 1 , further comprising the steps of:
forming a facet protection film or a facet reflection film having an aluminum oxide film lacking oxygen as a first layer on said facet of the semiconductor forming the optical resonator mirror; and
depositing the aluminum oxide film by a reactive sputtering method or an ion beam sputtering method of irradiating a metal aluminum target with plasma or ionic beams by using a gas mixture of an argon gas and an oxygen gas thereby causing film depositing reaction.