Providing fluorocarbon layers on conductive electrodes in making electronic devices such as OLED devices
View Patent ↗A method of making an electronic device in which a conductive electrode has been formed over a substrate including using a liquid to clean the conductive electrode, heating in a processing station the conductive electrode to a temperature which dries the conductive electrode and thereby removes residual cleaning liquid applied during the cleaning step, and providing an oxidizing plasma in the processing station to modify the properties of the conductive electrode. The method also includes producing a fluorocarbon plasma in the processing station to form a fluorocarbon layer over the modified conductive electrode, and further processing the structure to produce the electronic device.
1. In a method of making an electronic device in which a conductive electrode has been formed over a substrate, comprising:
a) providing an oxidizing plasma in a processing station to modify the properties of the conductive electrode by using shaped and appropriately positioned plasma producing electrodes to produce the oxygen-containing plasma in the processing station; and
b) producing a fluorocarbon plasma in the processing station to form a fluorocarbon layer over the modified conductive electrode and using the shaped electrodes to produce a spatially modulated fluorocarbon plasma in the chamber, which forms a fluorocarbon layer in selected areas of the substrate electrode structure including over the substrate electrode structure.
2. The method according to claim 1 wherein steps a)–b) are performed at pressures of 0.1 Bar or higher.
3. The method according to claim 1 further including the step of performing a post-deposition etch to remove fluorocarbon residue from areas where its presence is undesirable.
4. The method of claim 1 wherein the conductive electrode is ITO.
5. In a method of making an electronic device in which a conductive electrode has been formed over a substrate, comprising:
a) providing an oxidizing plasma in a processing station at a pressure greater than 0.1 Bar to modify the properties of the conductive electrode by using appropriately positioned plasma producing electrodes to produce the oxygen-containing plasma in the processing station; and
b) producing a fluorocarbon plasma in the processing station at a pressure greater than 0.1 Bar to form a fluorocarbon layer over the modified conductive electrode by selecting a mixture of gases including a fluorocarbon-bearing gas and hydrogen containing gas which will cause a thicker deposition of the fluorocarbon layer over the electrode than regions adjacent to the electrodes.
6. The method according to claim 5 wherein the mixture of gases contains hydrogen, a noble gas and at least one fluorocarbon gas which does not contain hydrogen.
7. The method of claim 5 wherein the gas wherein the fluorocarbon-bearing gas contains CF 4 and CHF 3 .
8. The method of claim 5 wherein the electrode is ITO.