Display device and manufacturing method for the same
View Patent ↗A screwdriver is disclosed having a shaft with a screw holder. The screw holder is receivable in a recess in a screw head, and has a spring element which can be elastically deformed transverse to the longitudinal axis of the shaft. A portion of the spring element may be engaged with a bore in the shaft and the bore may penetrate the front end of the shaft. The elastic segment may be disposed in a groove parallel to the longitudinal axis of the shaft segment so that, in the unstressed state of the spring element, at least a portion of the elastic segment protrudes beyond the cross-sectional surface of the shaft segment to engage a surface of the screw head recess to thereby retain the screw on the shaft.
1. A manufacturing method for a display device comprising:
a step for providing a source line around a pixel electrode provided on a substrate;
a step for forming an insulating film pattern having openings for a source and a drain;
a step for forming the source and the drain; and
a step for providing a semiconductor film on the source and the drain; and a step for providing a gate on the semiconductor film;
wherein the respective steps are implemented substantially under atmospheric pressure.
2. The manufacturing method according to claim 1 , further comprising a step for electrolytically plating the source line.
3. The manufacturing method according to claim 1 , further comprising a step for providing a film for protecting the gate and a step for applying electrophoretic ink after the film is provided.
4. The manufacturing method according to claim 3 , wherein the film is provided by laminating in the step for providing the film for protecting the gate.
5. The manufacturing method according to claim 1 , the semiconductor film being formed over the source and the drain.
6. A manufacturing method for a display device, the method comprising:
forming a source line on a substrate;
forming a source and a drain of a transistor on the substrate;
forming a semiconductor film contacting the source and the drain; and
providing a gate of the transistor;
wherein the source line, the source, the drain, the semiconductor film, and the gate are implemented substantially under atmospheric pressure.
7. The manufacturing method according to claim 6 , the forming of source line is implemented by electrolytic plating.
8. The manufacturing method according to claim 6 , further comprising:
forming a film covering the gate; and
applying an electrophoretic ink to the film.
9. The manufacturing method according to claim 8 , the forming of the film is implemented by lamination coating.
10. The manufacturing method according to claim 6 , the substrate is a resin film with the pixel electrode.