IP Library Granted Patent US 7,186,470
Granted Patent B2
US 7,186,470 · App. 10/777,830 · Granted Mar 6, 2007

Use of greater than about 15 angstrom thick coupling layer in AP-tab magnetic head

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Quick Facts
Patent No.
US 7,186,470
App. No.
10/777,830
Granted
Mar 6, 2007
Kind
B2
Abstract

A magnetic head that uses a thick AP coupling layer in an AP-tab structure. The head includes a free layer having an active area and tab regions on opposite sides of the active area. An antiparallel (AP) coupling layer is formed above the free layer. In one embodiment, the AP coupling layer has a thickness of 15 Å or more. In another embodiment, the AP coupling layer is formed of Ir, and preferably has a thickness of 15 Å or more. A bias layer is formed above each of the tab portions of the free layer, magnetic moments of the tab regions of the free layer being pinned antiparallel to the magnetic moments of the bias layers.

Claims (38)

1. A magnetic head, comprising:

a free layer having an active area and tab regions on opposite sides of the active area;

an antiparallel (AP) coupling layer having a thickness of at least about 15 Å formed above the free layer, the AP coupling layer being formed of Ir; and

a bias layer formed above each of the tab portions of the free layer, magnetic moments of the tab regions of the free layer being pinned antiparallel to the magnetic moments of the bias layers.

2. The head as recited in claim 1 , wherein the Ir AP coupling layer has a thickness of between about 15 and 25 Å.

3. The head as recited in claim 1 , wherein the Ir AP coupling layer has a coupling strength of at least about 0.5 erg/cm 2 .

4. The head as recited in claim 1 , further comprising an AP pinned layer structure below the free layer, the AP pinned layer structure includes at least two pinned layers having magnetic moments that are self-pinned antiparallel to each other, the pinned layers being separated by a second AP coupling layer.

5. The head as recited in claim 4 , wherein the pinned layers of the AP pinned layer structure are formed of CoFe.

6. The head as recited in claim 1 , wherein the free layer is formed on a layer of Cu.

7. The head as recited in claim 1 , wherein the free layer is formed directly on a layer of NiFe.

8. The head as recited in claim 1 , wherein the bias layers are formed of materials selected from a group consisting of NiFe, CoFe, Ta, Ru and laminates thereof.

9. The head as recited in claim 1 , wherein the free layer and the bias layer both include fcc CoFe.

10. A magnetic head, comprising:

a free layer having an active area and tab regions on opposite sides of the active area;

an antiparallel (AP) coupling layer formed above the free layer, the AP coupling layer having a thickness of at least about 15 Å; and

a bias layer formed above each of the tab portions of the free layer, magnetic moments of the tab regions of the free layer being pinned antiparallel to the magnetic moments of the bias layers.

11. The head as recited in claim 10 , wherein the AP coupling layer is formed of Ir, the AP coupling layer extending along the active area of the free layer.

12. The head as recited in claim 10 , wherein the AP coupling layer has a thickness of at least 15 Å.

13. The head as recited in claim 10 , wherein the AP coupling layer has a thickness of between about 15 and 25 Å.

14. The head as recited in claim 10 , wherein the AP coupling layer has a coupling strength of at least about 0.5 erg/cm 2 .

15. The head as recited in claim 10 , further comprising an AP pinned layer structure below the free layer, the AP pinned layer structure includes at least two pinned layers having magnetic moments that are self-pinned antiparallel to each other, the pinned layers being separated by a second AP coupling layer.

16. The head as recited in claim 15 , wherein the pinned layers of the AP pinned layer structure are formed of CoFe.

17. The head as recited in claim 10 , wherein the free layer is formed on a layer of Cu.

18. The head as recited in claim 10 , wherein the free layer is formed directly on a layer of NiFe.

19. The head as recited in claim 10 , wherein the bias layers are formed of materials selected from a group consisting of NiFe, CoFe, Ta, Ru and laminates thereof.

20. The head as recited in claim 10 , wherein the free layer and the bias layer both include fcc CoFe.

21. A magnetic storage system, comprising:

magnetic media;

a head for reading from and writing to the magnetic media, the head having a structure as recited in claim 1 ;

a write element coupled to the sensor;

a slider for supporting the head; and

control unit coupled to the head for controlling operation of the head.

22. A magnetic storage system, comprising:

magnetic media;

a head for reading from and writing to the magnetic media, the head having a structure as recited in claim 10 ;

a write element coupled to the sensor;

a slider for supporting the head; and

a control unit coupled to the head for controlling operation of the head.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2016
From: HGST NETHERLANDS B.V.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 040819/0450 →
CHANGE OF NAME Recorded Oct 25, 2012
From: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
To: HGST NETHERLANDS B.V.
Reel/Frame 029341/0777 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 11, 2004
From: GILL, HARDAYAL SINGH; MAAT, STEFAN
To: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
Reel/Frame 015012/0920 →