Active matrix substrate and method of fabricating the same
View Patent ↗An active matrix substrate includes a substrate composed of resin, and a polysilicon thin film diode formed on the substrate. The polysilicon thin film diode may be a lateral diode centrally having a region into which impurity is doped. As an alternative, the polysilicon thin film diode may be comprised of two lateral diodes electrically connected in parallel to each other and arranged in opposite directions.
1. A method of fabricating an active matrix substrate, comprising the steps of:
(a) forming an amorphous silicon film on a substrate composed of resin;
(b) doping impurity into said amorphous silicon film in a selected region thereof;
(c) radiating laser beams to said amorphous silicon film for crystallizing said amorphous silicon film into a polysilicon film; and
(d) patterning said polysilicon film into an island to thereby form a diode.
2. The method as set forth in claim 1 , wherein said diode comprises a lateral diode.
3. A method of fabricating an active matrix substrate, comprising the steps of:
(a) forming an electrically insulating film on a substrate composed of resin;
(b) forming a diode on said electrically insulating film by;
(1) forming an amorphous silicon film on said electrically insulating film;
(2) doping impurity into said amorphous silicon film in a selected region thereof;
(3) radiating laser beams to said amorphous silicon film for crystallizing said amorphous silicon film into a polysilicon film; and
(4) patterning said polysilicon film into an island;
(c) forming a metal wiring such that said metal wire makes electrical contact with said island-shaped polysilicon film;
(d) forming an interlayer insulating film all over a product resulting from said step (c);
(e) forming a contact hole through said interlayer insulating film such that said contact hole reaches said metal wire; and
(f) forming a metal film which will define a pixel electrode such that said contact hole is filled with said metal film.
4. The method as set forth in claim 3 , further comprising a step of (3′) annealing said polysilicon film, said step (3′) being to be carried out between said steps (3) and (4).
5. The method as set forth in claim 3 , further comprising a step of (6) applying hydrogen plasma to said polysilicon film.
6. The method as set forth in claim 3 , further comprising step of (g) forming a light-shielding film on said substrate.
7. A method of fabricating an active matrix substrate, comprising the steps of:
(a) forming an electrically insulating film on a substrate composed of resin;
(b) forming a diode on said electrically insulating film by:
(1) forming an amorphous silicon film on said electrically insulating film;
(2) doping impurity into said amorphous silicon film in a selected region thereof;
(3) radiating laser beams to said amorphous silicon film for crystallizing said amorphous silicon film into a polysilicon film;
(4) patterning said polysilicon film into an island;
(c) forming a metal wiring such that said metal wire makes electrical contact with said island-shaped polysilicon film;
(d) coating a photosensitive film over a product resulting from said step (c), exposing said photosensitive film to a light, and developing said photosensitive film to thereby form a pixel;
(e) forming an interlayer insulating film all over a product resulting from said step (d);
(f) forming a contact hole through said interlayer insulating film such that said contact hole reaches said metal wire; and
(g) forming a metal film which will define a pixel electrode such that said contact hole is filled with said metal film.
8. The method as set forth in claim 7 , further comprising the step of (d′) annealing said base steps for smoothing said base steps, said step (d′) being to be carried out between said steps (d) and (e).
9. The method as set forth in claim 7 , wherein said interlayer insulating film is formed of the same material as the material of which said base steps are formed, in said step (e).
10. A method of fabricating an active matrix substrate, comprising the steps of:
(a) forming an electrically insulating film on a substrate composed of resin; and
(b) forming a polysilicon thin film diode on said electrically insulating film.