High HC reference layer structure for self-pinned GMR heads

1. A magnetic head, comprising:

a free layer;

an antiparallel (AP) pinned layer structure spaced apart from the free layer; and

a high coercivity structure positioned towards the AP pinned layer structure on an opposite side thereof relative to the free layer, the high coercivity structure pinning a magnetic orientation of the AP pinned layer structure,

wherein a magnetic thickness of the high coercivity structure and a pinned layer of the AP pinned layer structure positioned closest thereto is about equal to a magnetic thickness of a pinned layer of the AP pinned layer structure positioned farthest front the high coercivity structure.

2. A head as recited in claim 1 , wherein the AP pinned layer structure includes at least two pinned layers having magnetic moments that are self-pinned antiparallel to each other, the pinned layers being separated by an AP coupling layer.

3. A head as recited in claim 2 , wherein the pinned layers of the AP pinned layer structure are formed of CoFe.

4. A head as recited in claim 1 , wherein the high coercivity structure includes a layer of CoPtCr.

5. A head as recited in claim 4 , wherein the high coercivity structure further includes a seed layer of magnetic material under the CoPtCr, the seed layer allowing proper growth of the CoPtCr.

6. A head as recited in claim 1 , wherein the head forms part of a GMR head.

7. A head as recited in claim 1 , wherein the head forms part of a CPP GMR sensor.

8. A head as recited in claim 1 , wherein the head forms part of a CIP GMR sensor.

9. A head as recited in claim 1 , wherein the head forms part of a tunnel valve sensor.

10. A magnetic storage system, comprising:

magnetic media;

at least one head for reading from and writing to the magnetic media, each head having:

a sensor having the structure recited in claim 1 ;

a writer coupled to the sensor;

a slider for supporting the head; and

a control unit coupled to the head for controlling operation of the head.

11. A magnetic head, comprising:

a free layer;

an antiparallel (AP) pint ed layer structure spaced apart from the free layer; and

a high coercivity structure positioned towards the AP pinned layer structure on an opposite side thereof relative to the free layer, the high coercivity structure pinning a magnetic orientation of the AP pinned layer structure,

wherein the AP pinned layer structure includes at least two pinned layers having magnetic moments that are self-pinned antiparallel to each other, the pinned layers being separated by an AP coupling layer;

wherein a magnetic thickness of the high coercivity structure and the pinned layer of the AP pinned layer structure positioned closest thereto is about equal to a magnetic thickness of the pinned layer of the AP pinned layer structure positioned farthest from the high coercivity structure.

12. A magnetic head, comprising:

a free layer;

an antiparallel (AP) pinned layer structure spaced apart from the free layer; and

a high coercivity structure positioned towards the AP pinned layer structure on an opposite side thereof relative to the free layer, the high coercivity structure pinning a magnetic orientation of the AP pinned layer structure,

wherein the high coercivity structure includes a layer of CoPtCr,

wherein the high coercivity structure further includes an amorphous layer positioned between the layer of CoPtCr and the AP pinned layer structure.

13. A head as recited in claim 12 , wherein the amorphous layer comprises CoFeX, where X is selected from a group consisting of Nb, Zn and Hf.

14. A magnetic head, comprising:

a free layer;

an antiparallel (AP) pinned layer structure spaced apart from the free layer;

a layer of CoPtCr positioned towards the AP pinned layer structure on an opposite side thereof relative to the free layer layer of CoPtCt pinning a magnetic orientation of the AP pinned layer structure; and

an amorphous layer positioned between the layer of CoPtCr and the AP pinned layer structure.

15. A head as recited in claim 14 , wherein the AP pinned layer structure includes at least two pinned layers having magnetic moments that are self-pinned antiparallel to each other, the pinned layers being separated by an AP coupling layer.

16. A head as recited in claim 15 , wherein the pinned layers of the AP pinned layer structure are formed of CoPe.

17. A head as recited in claim 15 , wherein a magnetic thickness of the layer of CoPtCr, amorphous layer, and the pinned layer of the AP pinned layer structure positioned closest to the amorphous layer is about equal to a magnetic thickness of the pinned layer of the AP pinned layer structure positioned farthest from the amorphous layer.

18. A head as recited in claim 14 , wherein the amorphous layer comprises CoFeX, where X is selected from a group consisting of Nb, Zn and Hf.

19. A head as recited in claim 14 , further comprising a seed layer of magnetic material upon which the CoPtCr is formed.

20. A head as recited in claim 14 , wherein the head forms parts of a GMR head.

21. A head s recited in claim 14 , wherein the head forms part of a CPP GMR sensor.

22. A head as recited in claim 14 , wherein the head forms part of a CIP GMR sensor.

23. A head as recited in claim 14 , wherein the head forms part of a tunnel valve sensor.

24. A magnetic storage system comprising:

magnetic media;

at least one head for reading from and writing to the magnetic media, each head having:

a sensor having the structure recited in claim 14 ,

a writer coupled to the sensor;

a slider for supporting the head; and

a control unit coupled to the head for controlling operation of the head.