System and method for cutting using a variable astigmatic focal beam spot
A variable astigmatic focal beam spot is formed using lasers with an anamorphic beam delivery system. The variable astigmatic focal beam spot can be used for cutting applications, for example, to scribe semiconductor wafers such as light emitting diode (LED) wafers. The exemplary anamorphic beam delivery system comprises a series of optical components, which deliberately introduce astigmatism to produce focal points separated into two principal meridians, i.e. vertical and horizontal. The astigmatic focal points result in an asymmetric, yet sharply focused, beam spot that consists of sharpened leading and trailing edges. Adjusting the astigmatic focal points changes the aspect ratio of the compressed focal beam spot, allowing adjustment of energy density at the target without affecting laser output power. Scribing wafers with properly optimized energy and power density increases scribing speeds while minimizing excessive heating and collateral material damage.
1. A method for forming an astigmatic focal beam spot to ablate and cut a substrate, said method comprising:
determining a target energy density for said substrate;
generating a raw laser beam;
expanding said raw laser beam;
modifying said expanded beam such that said modified beam is collimated in one principal meridian and converging in another principal meridian;
focusing said modified beam to produce an astigmatic focal beam spot on said substrate, said astigmatic focal beam spot having an elongated shape with a focused axis having a first focal point and an astigmatic axis having a second focal point separate from said first focal point, said astigmatic focal beam spot having a length along said astigmatic axis and a width along said focused axis, the width being less than the length, wherein said astigmatic focal beam spot is modified and focused to provide an energy density on said substrate at the target energy density for said substrate; and
moving said substrate in a cutting direction along said length of said astigmatic focal beam spot such that said astigmatic focal beam spot causes ablation of said substrate to obtain at least a partial cut in said substrate.
2. The method of claim 1 wherein said raw beam is generated using a solid state laser.
3. The method of claim 2 wherein said raw beam is generated in a UV range less than about 400 nm.
4. The method of claim 3 wherein said raw beam is generated with a pulse duration less than about 40 ns.
5. The method of claim 1 wherein expanding said raw beam includes passing said raw beam through a beam expanding telescope.
6. The method of claim 1 wherein modifying said expanded beam includes passing said expanded beam through an anamorphic lens system comprising a cylindrical plano-concave lens and a cylindrical plano-convex lens.
7. The method of claim 1 further comprising varying the convergence of said modified beam to adjust the energy density provided by said astigmatic focal beam spot.
8. The method of claim 1 wherein modifying said expanded beam includes passing said expanded beam through a single anamorphic lens to provide a fixed convergence.
9. The method of claim 1 further comprising symmetrically cropping low intensity edges of said expanded beam.
10. The method of claim 1 wherein focusing said modified beam comprises passing said modified beam through a beam focusing lens, wherein said second focal point is shorter than a nominal focal length of said beam focusing lens and said first focal point is formed generally at said nominal focal length of said beam focusing lens.
11. The method of claim 1 wherein said substrate includes sapphire.
12. The method of claim 11 wherein said substrate includes a GaN layer on said sapphire, and wherein said astigmatic focal beam spot is directed at a surface of said GaN layer such that laser energy is coupled into said GaN layer to cause ablation of said sapphire.
13. The method of claim 1 wherein said substrate is part of a semiconductor wafer including a device layer on said substrate, and wherein moving said substrate includes moving said semiconductor wafer along the length of said astigmatic focal beam spot to form at least one scribe line in said semiconductor wafer.
14. The method of claim 1 wherein said substrate is made of a material selected from the group consisting of metal, GaAs, silicon, GaP, InP, Ge, alumina, glass and polymers.
15. The method of claim 1 wherein said astigmatic focal beam spot has a width of less than about 20 μm.
16. The method of claim 15 wherein said astigmatic focal beam spot has a width of about 5 μm.
17. The method of claim 1 wherein modifying said expanded beam includes creating a plurality of separated astigmatic beamlets.
18. The method of claim 17 wherein modifying said expanded beam includes controlling at least one of a length of said beamlets and a distance between said beamlets.
19. The method of claim 13 wherein moving said substrate along the length of said astigmatic focal beam spot includes moving said semiconductor wafer to form a plurality of scribe lines in said semiconductor wafer.
20. The method of claim 19 further comprising separating said semiconductor wafer into dies using said plurality of scribe lines.
21. The method of claim 1 wherein moving said substrate in a cutting direction comprises:
moving said substrate in a cutting direction along the length of said astigmatic focal beam spot such that at least one said at least a partial cut is formed in an x direction on said substrate;
rotating said substrate about 90 degrees; and
moving said substrate in a cutting direction along the length of said astigmatic focal beam spot such that at least one said at least a partial cut is formed in a y direction on said substrate.
22. The method of claim 6 further comprising varying an aspect ratio of said astigmatic focal beam spot to adjust the energy density provided by said astigmatic focal beam spot by varying a spacing between said cylindrical plano-concave lens and said cylindrical plano-convex lens.
23. The method of claim 12 wherein moving said substrate includes moving said sapphire substrate along a the length of said astigmatic focal beam spot to form at least one scribe line in said sapphire substrate.
24. The method of claim 1 wherein said substrate includes a metal film made of a metal selected from the group consisting of molybdenum and copper.
25. The method of claim 1 further comprising:
prior to causing ablation, applying a water soluble protective coating to said substrate, said protective coating including at least one surfactant in a water-soluble liquid glycerin.