Semiconductor optical devices and optical modules
View Patent ↗An InGaAlAs-based buried type laser is expected to improve properties of the device, but generates defects at a re-growth interface and is difficult to realize a long-term reliability necessary for optical communication, due to inclusion of Al in an active layer. A semiconductor optical device and an optical module including a package substrate and a semiconductor optical device mounted on the package substrate are provided, whereby there are realized the improvement of device properties and the long-term reliability through the use of an Al composition ratio-reduced tensile strained quantum well layer.
1. A semiconductor optical device, comprising:
an InP substrate;
an active region formed above the InP substrate, said active region being comprised of a quantum well structure;
optical guiding layers each formed on and under said active region; and
clad layers;
wherein on sides in the direction crossing the light-emitting direction, the sides of the active region are buried with semiconductor layers having band gap energy greater than that of a quantum well layer; and
wherein a composition of Al of the quantum well layer is in the group consisting of InGaAlAs compound semiconductor layers, a composition ratio of the Al being in the range of 0 to 0.13, both inclusive, wherein
the InGaAlAs is in the group consisting of compositions A (In: 0.87, Ga: 0, Al: 0.13), B (In: 1.0, Ga: 0, Al: 0), C (In: 0, Ga: 1.0, Al: 0), and D (In: 0, Ga: 0.87, Al: 0.13) in the composition diagram of the four-element based compound semiconductor materials (In 1−x−y Ga x Al y As).
2. A semiconductor optical device, comprising:
an InP substrate;
an active region formed above the InP substrate, said active region being comprised of a quantum well structure;
optical guiding layers each formed on and under said active region; and
clad layers;
wherein on sides in the direction crossing the light-emitting direction, the sides of the active region are buried with semiconductor layers having band gap energy greater than that of a quantum well layer;
wherein the composition (In 1−x−y Ga x Al y As) of the quantum well layer is in the group consisting of compositions E (In: 0.52, Ga: 0, Al: 0.48), F (In: 0.53, Ga: 0.47, Al: 0), C (In: 0, Ga: 1.0, Al: 0), and G (In: 0, Ga: 0, Al: 1.0) in the composition diagram of the four-element based compound semiconductor materials; and
wherein the quantum well layer has tensile strain.
3. A semiconductor optical device, comprising:
an InP substrate;
an active region formed above the InP substrate, said active region being comprised of a quantum well structure;
optical guiding layers each formed on and under said active region; and
clad layers;
wherein on sides in the direction crossing the light-emitting direction, the sides of the active region are buried with semiconductor layers having band gap energy greater than that of a quantum well layer; and
wherein a composition of Al of the quantum well layer is in the group consisting of InGaAlAs compound semiconductor layers, a composition ratio of the Al being in the range of 0 to 0.13. both inclusive, wherein
the InGaAlAs layer is in the group consisting of compositions H (In: 0.53, Ga: 0.34, Al: 0.13), F (In: 0.53, Ga: 0.47, Al: 0), C (In: 0, Ga: 1.0, Al: 0), and D (In: 0, Ga: 0.87, Al: 0.13) in the composition diagram of the four-element based compound semiconductor materials (In 1−x−y Ga x Al y As), and has tensile strain.
4. The semiconductor optical device according to claim 3 , wherein
the photoluminescence wavelength from the active region is within the range of 1.25 μm to 1.35 μm.
5. The semiconductor optical device according to claim 4 , wherein
a barrier layer constituting the active region is p-type doped.
6. A semiconductor optical device, comprising:
an InP substrate;
an active region formed above the InP substrate, said active region being comprised of a quantum well structure;
optical guiding layers each formed on and under said active region; and
clad layers;
wherein on sides in the direction crossing the light-emitting direction, the sides of the active region are buried with semiconductor layers having band gap energy greater than that of a quantum well layer; and
wherein a composition of Al of the quantum well layer is in the group consisting of InGaAlAs compound semiconductor layers, a composition ratio of the Al being in the range of 0 to 0.13. both inclusive, wherein
the InGaAlAs layer is in the group consisting of compositions H (In: 0.53, Ga: 0.34, Al: 0.13), I (In: 0.53, Ga: 0.4, Al: 0.07), J (In: 0.4, Ga: 0.6, Al: 0), K (In: 0. 26, Ga: 0.74, Al: 0) and L (In: 0.46, Ga: 0.41, Al: 0.13) in the composition diagram of the four-element based compound semiconductor materials (In 1−x−y Ga x Al y As); and has tensile strain.
7. The semiconductor optical device according to claim 6 , wherein
a barrier layer constituting the active region is p-type doped.
8. A semiconductor optical device, comprising:
an InP substrate;
an active region formed above the InP substrate, said active region being comprised of a quantum well structure;
optical guiding layers each formed on and under said active region; and
clad layers;
wherein on sides in the direction crossing the light-emitting direction, the sides of the active region are buried with semiconductor layers having band gap energy greater than that of a quantum well layer; and
wherein a composition of Al of the quantum well layer is in the group consisting of InGaAlAs compound semiconductor layers, a composition ratio of the Al being in the range of 0 to 0.13. both inclusive,
wherein the photoluminescence wavelength from the active region is within the range of 1.25 μm to 1.35 μm; and
wherein the InGaAlAs layer is in the group consisting of compositions H (In: 0.53, Ga: 0.34, Al: 0.13), I (In: 0.53, Ga: 0.4, Al: 0.07), J (In: 0.4, Ga: 0.6, Al: 0K (In: 0.26, Ga: 0.74, Al: 0) and L (In: 0.46, Ga: 0.41, Al: 0.13) in the composition diagram of the four-element based compound semiconductor materials (In 1−x−y Ga x Al y As).
9. The semiconductor optical device according to claim 8 , wherein
a barrier layer constituting the active region is p-type doped.
10. A semiconductor optical device, comprising:
an InP substrate;
an active region formed above the InP substrate, said active region being comprised of a quantum well structure;
optical guiding layers each formed on and under said active region; and
clad layers;
wherein on sides in the direction crossing the light-emitting direction, the sides of the active region are buried with semiconductor layers having band gap energy greater than that of a quantum well layer; and
wherein a composition of Al of the quantum well layer is in the group consisting of InGaAlAs compound semiconductor layers, a composition ratio of the Al being in the range of 0 to 0.13. both inclusive, wherein
the InGaAlAs layer is in the group consisting of compositions O (In: 0.76, Ga: 0.11, Al: 0.13), P (In: 0.5, Ga: 0.5, Al: 0), Q (In: 0.34, Ga: 0.66, Al: 0), and R (In: 0.55, Ga: 0.32, Al: 0.13) in the composition diagram of the four-element based compound semiconductor materials (In 1−x−y Ga x Al y As).
11. The semiconductor optical device according to claim 10 , wherein
a barrier layer constituting the active region is p-type doped.
12. A semiconductor optical device, comprising:
an InP substrate;
an active region formed above the InP substrate, said active region being comprised of a quantum well structure;
optical guiding layers each formed on and under said active region; and
clad layers;
wherein on sides in the direction crossing the light-emitting direction, the sides of the active region are buried with semiconductor layers having band gap energy greater than that of a quantum well layer; and
wherein a composition of Al of the quantum well layer is in the group consisting of InGaAlAs compound semiconductor layers, a composition ratio of the Al being in the range of 0 to 0.13. both inclusive,
wherein the InGaAlAs layer is in the group consisting of the compositions O (In: 0.76, Ga: 0.11, Al: 0.13), P (In: 0.5, Ga: 0.5, Al: 0), Q (In: 0.34, Ga: 0.66, Al: 0), and R (In: 0.55, Ga: 0.32, Al: 0.13) in the composition diagram of the four-element based compound semiconductor materials (In 1−x−y Ga x Al y As); and
wherein the photoluminescence wavelength from the active region is within the range of 1.36 μm to 1.49 μm.
13. The semiconductor optical device according to claim 12 , wherein
a barrier layer constituting the active region is p-type doped.
14. An optical module at least including a package substrate and a semiconductor optical device mounted on the package substrate,
wherein said semiconductor optical device is a semiconductor optical device, comprising: an InP substrate; an active region formed above the InP substrate, said active region being comprised of a quantum well structure; optical guiding layers each formed on and under said active region; and clad layers,
wherein on sides in the direction crossing the light-emitting direction, the sides of the active region are buried with semiconductor layers having band gap energy greater than that of a quantum well layer, and
wherein a composition of Al of the quantum well layer is in the group consisting of InGaAlAs compound semiconductor layers, a composition ratio of the Al being in the range of 0 to 0.13. both inclusive,
wherein the sealing structure of the optical module is of non-hermitic sealing; and
wherein the semiconductor optical device is at least mounted on the package substrate without using a temperature controller.