IP Library Granted Patent US 7,115,194
Granted Patent B2
US 7,115,194 · App. 10/786,547 · Granted Oct 3, 2006

Magnetron sputtering apparatus

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Quick Facts
Patent No.
US 7,115,194
App. No.
10/786,547
Granted
Oct 3, 2006
Kind
B2
Abstract

A magnetron sputtering apparatus 1 is composed of a vacuum chamber 2, a target 3, a cathode 4 that holds the target 3 in the vacuum chamber 2, a substrate 5, an anode 6 that holds the substrate 5 and is allocated above the cathode 4 so as to face the substrate 5 toward the target 3 on the cathode 4, a permanent magnet 71 that generates magnetic field 141 and is allocated under the cathode 4, and a rotation controller 12 for rotating the permanent magnet 71 so as to pivot on a center axis of the target 3. The permanent magnet 71 is further composed of a base 8, a first permanent magnet 91 that is fixed on the base 8 in the middle and a second permanent magnet 101 in a ring shape that is fixed in an external circumferential area of the base 8 so as to surround the first permanent magnet 91, wherein a magnetic polarity of the second permanent magnet 101 is inverse with respect to that of the first permanent magnet 91 and magnetic field strength of the second permanent magnet 101 is weaker than that of the first permanent magnet 91, and further an upper portion of the permanent magnet 71 is in a cylindrical shape of which top portion is cut diagonally.

Claims (33)

1. A magnetron sputtering apparatus comprising:

a vacuum chamber;

a target;

a cathode holding the target in the vacuum chamber;

a substrate;

an anode holding the substrate and being located above the cathode so as to face the substrate toward the target on the cathode;

a permanent magnet assembly generating a magnetic field and being located under the cathode; and

a rotation controller rotating the permanent magnet assembly around an axis with rotation occurring on a center of the target as the axis,

the permanent magnet assembly further comprising:

a base;

a first permanent magnet being fixed on the base in the middle; and

a second permanent magnet in a ring shape being fixed in a peripheral area of the base so as to surround the first permanent magnet,

wherein a magnetic polarity of the second permanent magnet is inverse with respect to a magnetic polarity of the first permanent magnet, and

wherein magnetic field strength of the second permanent magnet is weaker than magnetic field strength of the first permanent magnet, and

wherein the permanent magnet assembly is formed such that a plane constituted by a top surface of the first permanent magnet and another top surface of the second permanent magnet is slanted with respect to a surface of the target.

2. The magnetron sputtering apparatus in accordance with claim 1 , wherein the first permanent magnet is fixed on a middle of the base wherein a center axis of the first permanent magnet is shifted eccentrically with respect to the center of rotation of the permanent magnet assembly.

3. A magnetron sputtering apparatus comprising:

a vacuum chamber;

a target;

a cathode holding the target in the vacuum chamber;

a substrate;

an anode holding the substrate and being located above the cathode so as to face the substrate toward the target on the cathode;

a permanent magnet assembly generating magnetic field and being located under the cathode; and

a rotation controller rotating the permanent magnet assembly around an axis with rotation occurring on a center of the target as the axis,

the permanent magnet assembly further comprising:

a base;

a first permanent magnet being fixed on a middle of the base wherein a center axis of the first permanent magnet is shifted eccentrically with respect to the center of rotation of the permanent magnet assembly; and

a second permanent magnet in a ring shape being fixed in a peripheral area of the base so as to surround the first permanent magnet;

wherein a magnetic polarity of the second permanent magnet is inverse with respect to a magnetic polarity of the first permanent magnet; and

wherein magnetic field strength of the second permanent magnet is weaker than magnetic field strength of the first permanent magnet.

4. The magnetron sputtering apparatus in accordance with claim 3 , further comprising:

a wedge shaped member having a predetermined slant angle being located between the rotation controller and the permanent magnet assembly; and

wherein a top surface of the member contacting a bottom surface of the base is slanted with respect to the target.

Assignments (6)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENT NUMBERS 10342096;10671117; 10716375; 10716376;10795407;10795408; AND 10827591 PREVIOUSLY RECORDED AT REEL: 58314 FRAME: 657. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Feb 29, 2024
From: RAKUTEN, INC.
To: RAKUTEN GROUP, INC.
Reel/Frame 068066/0103 →
CHANGE OF NAME Recorded Dec 6, 2021
From: RAKUTEN, INC.
To: RAKUTEN GROUP, INC.
Reel/Frame 058314/0657 →
CHANGE OF ADDRESS Recorded Dec 17, 2015
From: RAKUTEN, INC.
To: RAKUTEN, INC.
Reel/Frame 037751/0006 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2014
From: JVC KENWOOD CORPORATION
To: RAKUTEN, INC.
Reel/Frame 032535/0108 →
MERGER Recorded Apr 9, 2012
From: VICTOR COMPANY OF JAPAN, LTD.
To: JVC KENWOOD CORPORATION
Reel/Frame 028010/0539 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 26, 2004
From: ISEKI, TAKAYUKI
To: VICTOR COMPANY OF JAPAN, LTD.
Reel/Frame 015112/0259 →