Strain compensating structure to reduce oxide-induced defects in semiconductor devices

1 . A light-emitting device, comprising:

an active region configured to generate light in response to injected charge; and

a current confinement structure located to direct charge into the active region and including a strain compensating layer adjacent an oxide-forming layer.

2 . The light-emitting device of claim 1 , in which the current confinement structure comprises an additional strain compensating layer adjacent the oxide-forming layer, where the oxide-forming layer is sandwiched between the strain compensating layers.

3 . The light-emitting device of claim 1 , in which the strain compensating layer comprises gallium, indium and phosphorus.

4 . The light-emitting device of claim 1 , in which the oxide-forming layer comprises aluminum, gallium and arsenic.

5 . The light-emitting device of claim 1 , in which the strain compensating layer consists essentially of Ga 1-x In x P, where x≦0.5.

6 . The light-emitting device of claim 1 , in which the oxide-forming layer consists essentially of Al x Ga 1-x As, where x≧0.96.

7 . The light-emitting device of claim 1 , in which:

the strain compensating layer consists essentially of gallium indium phosphide GaInP; and

the oxide-forming layer consists essentially of aluminum gallium arsenide AlGaAs.

8 . The light-emitting device of claim 7 , in which:

the strain compensating layer consists essentially of gallium indium phosphide Ga 1-x In x P in which x≦0. 5; and

the oxide-forming layer essentially of aluminum gallium arsenide Al x Ga 1-x As in which x≧0.96.

9 . The light-emitting device of claim 1 , structured to generate light having a wavelength between 620 nm and 1650 nm.

10 . A method of making a strain compensating structure, the method comprising:

providing a substrate;

forming over the substrate a strain compensating layer of a first semiconductor material;

forming an oxide-forming layer of a second semiconductor material juxtaposed with the strain compensating layer to form the strain compensating structure; and

oxidizing at least part of the oxide-forming layer.

11 . The method of claim 10 , in which:

the first semiconductor material comprises indium, gallium and phosphorus; and

the second semiconductor material comprises aluminum, gallium and arsenide.

12 . The method of claim 1 1 , further comprising:

forming the strain compensating layer using Ga 1-x In x P, where x≦0.5; and

forming the oxide layer using Al x Ga 1-x As, where x≧0.96.

13 . A method for generating light, the method comprising:

forming an optical cavity;

locating an active region in the optical cavity, the active region configured to generate light in response to injected current;

forming a current confinement structure located to direct current into the active region, including:

forming a strain compensating layer of a first semiconductor material including gallium (Ga), indium (In) and phosphorus (P);

forming an oxide-forming layer of a second semiconductor material including aluminum (Al) gallium (Ga) and arsenic (As);

oxidizing at least part of the oxide-forming layer; and

injecting current into the active region using the current confinement structure.

14 . The method of claim 13 , in which the active region is configured to generate light having a wavelength between 620 nm and 1650 nm.

15 . A strain compensating structure, comprising:

a strain compensating layer of a first semiconductor material including gallium (Ga), indium (In) and phosphorus (P); and

an oxide-forming layer of a second semiconductor material including aluminum (Al) gallium (Ga) and arsenic (As) juxtaposed with the strain compensating layer.

16 . The strain compensating structure of claim 15 , in which the first semiconductor material consists essentially of gallium indium phosphide Ga 1-x In x P in which x≦0.5.

17 . The strain compensating structure of claim 15 , in which the second semiconductor material consists essentially of aluminum gallium arsenide Al x Ga 1-x As in which x≧0.96.

18 . The strain compensating structure of claim 15 , in which:

the first semiconductor material consists essentially of gallium indium phosphide (GaInP); and

the second semiconductor material consists essentially of aluminum gallium arsenide (AlGaAs).

19 . The strain compensating structure of claim 18 , in which:

the first semiconductor material consists essentially of gallium indium phosphide Ga 1-x In x P in which x≦0.5; and

the second semiconductor material essentially of aluminum gallium arsenide Al x Ga 1-x As in which x≧0.96.