Additive for photoresist composition for resist flow process
View Patent ↗The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R′ are as defined in the specification of the invention.
1. A resist flow process for forming a photoresist pattern comprising the steps of:
(a) forming a first photoresist pattern on a substrate using a photoresist composition comprising a photoresist polymer, a photo acid generator, an organic solvent, and an additive selected from the group consisting of compounds of the following Formulas 3 to 7:
wherein said photoresist polymer is a compound selected from the group consisting of the following Formulas 8 and 9:
wherein, R 1 is an acid labile protecting group:
R 2 is hydrogen; R 3 is selected from the group consisting of hydrogen, C 1 –C 10 alkyl, C 1 –C 10 alkoxyalkyl, and C 1 –C 10 alkyl containing at least one hydroxyl group (—OH);
n is an integer from 1 to 5; and w+x+y=50 mol %, and z is 50 mol %; and
(b) performing resist flow process onto the first photoresist pattern to obtain a second photoresist pattern.
2. The resist flow process according to claim 1 , wherein said step (a) further comprises the steps of:
(i) coating said photoresist composition on said substrate to form a photoresist film, wherein said substrate is a semiconductor devise; and
(ii) producing said first photoresist pattern using a lithography process.
3. The resist flow process according to claim 1 , wherein said first and second photoresist pattern comprises a contact hole pattern.
4. The resist flow process according to claim 1 , wherein said resist flow process comprises heating to a temperature between Tg of photoresist polymer and a decomposition temperature (T d ) where the polymer starts to be decomposed.
5. The resist flow process according to claim 1 , wherein said additive is present in an amount ranging from 1 wt % to 70 wt % of the photoresist polymer.
6. The resist flow process according to claim 1 , wherein said photoacid generator is selected from the group consisting of diphenyl iodide hexafluorophosphate, diphenyl iodide hexafluoroarsenate, diphenyl iodide hexafluoroantimonate, diphenyl p-methoxyphenyl triflate, diphenyl p-toluenyl triflate, diphenyl p-isobutylphenyl triflate, diphenyl p-tert-butylphenyl inflate, triphenylsulfonium, hoxafluororphosphate, triphenylsulfonium hexafluoroarsenate, triphenylsulfonium hexafluoroantimonate, triphenylsulfonium triflate, dibutylnaphthylsulfonium triflate, and mixtures thereof.
7. The resist flow process according to claim 1 , wherein said photoacid generator is present in an amount ranging from 0.01 wt % to 10 wt % of the photoresist polymer.
8. The resist flow process according to claim 1 , wherein said organic solvent is selected from the group consisting of propyleneglycol methyl ether acetate, ethyl lactate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate and cyclohexanone.
9. The resist flow process according to claim 1 , wherein said organic solvent is present in an amount ranging from 100 wt % to 1000 wt % of the photoresist polymer.
10. A resist flow process for forming a photoresist pattern comprising the steps of:
(a) forming a first photoresist pattern on a substrate using a photoresist composition comprising a photoresist polymer, a photo acid generator, an organic solvent, and an additive selected from the group consisting of compounds of following Formulas 3 to 7:
(d) performing a resist flow process onto the first photoresist pattern to obtain a second photoresist pattern, wherein said photoresist polymer is selected from the group consisting of the following Formula 10 to 13:
11. The resist flaw process according to claim 10 , wherein step (a) further comprises the steps of:
(i) coating said photoresist composition on said substrate to form a photoresist film, wherein said substrate is a semiconductor device; and
(ii) producing said first photoresist pattern using a lithography process.
12. The resist flow process according to claim 10 , wherein said first and second photoresist pattern comprises a contact hole pattern.
13. The resist flow process according to claim 10 , wherein said resist flow process comprises heating to a temperature between Tg of the photoresist polymer and a decomposition temperature (T d ) where the polymer starts to be decomposed.
14. The resist flow process according to claim 10 , wherein said additive is present in an amount ranging from 1 wt % to 70 wt % of the photoresist polymer.
15. The resist flow process according to claim 10 , wherein said photoacid generator is selected from the group consisting of diphenyl iodide hexafluorophosphate, diphenyl iodide hexafluoroarsenate, diphenyl iodide hexafluoroantimonate, diphenyl p-methoxyphenyl triflate, diphenyl p-toluenyl triflate, diphenyl p-isobutylphenyl triflate, diphenyl p-tert-butylphenyl triflate, triphenylsulfonium hexafluororphosphate, triphenylsulfonium hexafluoroarsenate, triphenylsulfonium hexafluoroantimonate, triphenylsulfonium triflate, dibutylnaphthylsulfonium triflate, and mixtures thereof.
16. The resist flow process according to claim 10 , wherein amid photoacid generator is present in an amount ranging from 0.01 wt % to 10 wt % of the photoresist polymer.
17. The resist flow process according to claim 10 , wherein said organic solvent is selected from the group consisting of propyleneglycol methyl ether acetate, ethyl lactate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate and cyclohexanone.
18. The resist flow process according to claim 10 , wherein said organic solvent is present in an amount ranging from 100 wt % to 1000 wt % of the photoresist polymer.