IP Library Granted Patent US 7,153,546
Granted Patent B2
US 7,153,546 · App. 10/790,803 · Granted Dec 26, 2006

Perpendicular magnetic recording media, manufacturing process of the same, and magnetic storage apparatus using the same

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Quick Facts
Patent No.
US 7,153,546
App. No.
10/790,803
Granted
Dec 26, 2006
Kind
B2
Abstract

Provided are a double-layer perpendicular magnetic recording medium having a high medium S/N at an areal recording density of 50 Gbits or more per square inch, and a magnetic storage apparatus having excellent reliability with a low error rate. The perpendicular magnetic recording medium is formed by sequentially laminating a domain control layer, an amorphous soft magnetic underlayer, an intermediate layer, and a perpendicular recording layer on a substrate. The domain control layer is a triple-layer film formed by laminating a first polycrystalline soft magnetic layer, a disordered antiferromagnetic layer, and a second polycrystalline soft magnetic layer from a substrate side.

Claims (9)

1. A manufacturing process of a perpendicular magnetic recording medium comprising the steps of:

forming a disordered antiferromagnetic layer on a substrate;

forming a polycrystalline soft magnetic layer on the antiferromagnetic layer;

and forming an amorphous soft magnetic layer on the polycrystalline soft magnetic layer;

wherein said every steps are carried out while applying a magnetic field having a component parallel to a surface of the substrate.

2. The manufacturing process according to claim 1 , wherein the direction of the magnetic field having a component parallel to the surface of the substrate is substantially parallel to a radial direction of the substrate.

3. The manufacturing process according to claim 1 , further comprising:

forming another polycrystalline soft magnetic layer on the substrate prior to the step of forming the antiferromagnetic layer.

4. The manufacturing process according to claim 3 , wherein during the step of forming the disordered antiferromagnetic layer, an interlayer exchange coupling occurs between said another polycrystalline soft magnetic layer and the disordered antiferromagnetic layer.