Strained silicon carbon alloy MOSFET structure and fabrication method thereof
View Patent ↗A MOSFET structure utilizing strained silicon carbon alloy and fabrication method thereof. The MOSFET structure includes a substrate, a graded SiGe layer, a relaxed buffer layer, a strained silicon carbon alloy channel layer, a gate dielectric layer, a polysilicon gate electrode (or metal gate electrode) and a source/drain region.
1. A strained silicon carbon alloy MOSFET structure, comprising:
a substrate;
a graded SiGe layer on the substrate;
a relaxed buffer layer on the graded SiGe layer;
a strained silicon carbon alloy layer on the relaxed buffer layer acting as a channel;
a gate dielectric layer in contact with the strained silicon carbon alloy layer;
a gate electrode on the gate dielectric layer; and
a source and drain region on the substrate opposite and adjacent to the gate electrode.
2. The structure of claim 1 , wherein the relaxed buffer layer comprises Si—Ge—C alloy, Si, Ge or other combinations of at least two semiconductor materials.
3. The structure of claim 1 , wherein the gate dielectric layer comprises HfO 2 , Si 3 N 4 , Al 2 O 3 , or any high dielectric constant (high k) dielectric material.
4. The structure of claim 1 , wherein the MOSFET is a NMOS or PMOS.
5. The structure of claim 1 , wherein the gate electrode is polysilicon gate electrode.
6. The structure of claim 1 , wherein the substrate comprises n-type and p-type doped Ge, III–V group semiconductor, or silicon-on-insulator (SOI).