Applications of semiconductor nano-sized particles for photolithography
Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.
1. A method of performing immersion photolithography comprising:
projecting light along an optical path to form a light pattern on a substrate comprising a wafer that is at least in part coated with a layer comprising photoresist, at least a portion of said light passing through (a) at least one photomask with at least one pattern, (b) at least final optics, and (c) a medium having semiconductor nano-sized particles dispersed therein, said semiconductor nano-sized particles having a refractive index higher than said medium, the semiconductor nano-sized particle dispersed medium filling up space between said final optics and said substrate;
collecting on said photoresist, a portion of said light passing through said at least one photomask, said final optics and the semiconductor nano-sized Particle dispersed medium; and
changing the solubility of said photoresist at least in part in response to said collected light pattern.
2. The method of claim 1 wherein said medium comprises a liquid, polymer or a gel.
3. The method of claim 2 wherein said light has a wavelength of 193 nm.
4. The method of claim 1 wherein said medium comprises water.
5. The method of claim 4 wherein said light has a wavelength of 193 nm.
6. The method of claim 4 wherein said light has a wavelength of 248 nm.
7. The method of claim 1 wherein the nano-sized particle dispersed medium is flowed continuously through the space between said final optics and said coated wafer.
8. The method of claim 7 wherein said medium comprises water.
9. The method of claim 7 wherein said light has a wavelength of 193 nm.
10. The method of claim 1 wherein the said semiconductor nano-sized particles are selected from the group consisting of C, Si, Ge, CuCl, CuBr, CuI, AgCl, AgBr, AgI, Ag 2 S, CaO, MgO, ZnO, Mg x Zn 1-x O, ZnS, HgS, ZnSe, CdS, CdSe, CdTe, HgTe, PbS, BN, AlN, GaN, Al x Ga 1-x N, GaP GaAs, GaSb, InP, InAs, In x Ga 1-x As, SiC, Si 1-x Ge x , Si 3 N 4 , ZrN, CaF 2 , YF 3 , Al 2 O 3 , SiO 2 , TiO 2 , Cu 2 O, Zr 2 O 3 , ZrO 2 , SnO 2 , YSi 2 , GaInP 2 , Cd 3 P 2 , Fe 2 S, Cu 2 S, CuIn 2 S 2 , MoS 2 , In 2 S 3 , Bi 2 S 3 , CuIn 2 Se 2 , In 2 Se 3 , HgI 2 , PbI 2 , Landthoids oxides, and their various alloys.
11. The method of claim 1 wherein said semiconductor nano-sized particles have bandgaps.
12. The method of claim 1 wherein said nano-sized particles are transparent at least at one of lithographic wavelengths.
13. The method of claim 1 wherein said nano-sized particles comprise nanocrystals.
14. The method of claim 1 wherein said light has a wavelength of 193 nm.
15. The method of claim 1 wherein said light has a wavelength of 157 nm.
16. The method of claim 1 wherein said light has a wavelength of 248 nm.
17. The method of claim 1 wherein said light has a wavelength of 365 nm.
18. The method of claim 1 wherein said nano-sized particles are dispersed in water and the nano-sized particle dispersed water is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 193 nm; and said nano-sized particles comprise nanocrystals that are transparent at 193 nm.
19. The method of claim 1 wherein said medium is a liquid, a polymer, or a gel and the nano-sized particle dispersed medium is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 193 nm; and said nano-sized particles comprise nanocrystals that are transparent at 193 nm.
20. The method of claim 1 wherein said nano-sized particles are dispersed in water and the nano-sized particle dispersed water is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 248 nm; and said nano-sized particles comprise nanocrystals that are transparent at 248 nm.
21. The method of claim 1 wherein said medium is a liquid, a polymer, or a gel and the nano-sized particle dispersed medium is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 248 nm; and said nano-sized particles comprise nanocrystals that are transparent at 248 nm.
22. The method of claim 1 wherein said nano-sized particles are dispersed in water and the nano-sized particle dispersed water is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 193 nm; and said nano-sized particles comprise nanocrystals.
23. The method of claim 1 wherein said medium is a liquid, a polymer, or a gel and the nano-sized particle dispersed medium is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 193 nm; and said nano-sized particles comprise nanocrystals.
24. The method of claim 1 wherein said nano-sized particles are dispersed in water and the nano-sized particle dispersed water is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 248 nm; and said nano-sized particles comprise nanocrystals.
25. The method of claim 1 wherein said medium is a liquid, a polymer, or a gel and the nano-sized particle dispersed medium is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 248 nm; and said nano-sized particles comprise nanocrystals.