Device for processing an optical signal
View Patent ↗To make a decision circuit for RZ format optical signals at a very high data rate, the device ( 1 ′) comprises an electronic component ( 2 ) having a tunnel diode characteristic presenting a peak current (I P ) and a valley current (I V ). The device ( 1 ′) comprises a control current source ( 9 ) controlled by a control signal (V RESET ) said current being injected into the component ( 2 ) and taking a first value or a second value. In response to an input optical signal (E), generator means ( 2 ) generate a current (I RZ ) into the component ( 2 ). The valley current (I V ) is of a value greater than the first current value and the peak current (I P ) is of a value lying between a second current value (I R ) and the sum of said second value plus the value (I RZ ) of the current generated the generator means ( 2 ).
1. A processing device ( 1 ) for processing an input optical data signal (E) modulated with a return-to-zero (RZ) type modulation format, the device comprising an electronic component ( 2 ) having a tunnel diode characteristic presenting a peak current (I P )and a valley current (I V ), said device ( 1 ) being characterized in that it further comprises:
a controlled current source ( 3 , 4 , 9 ) suitable for injecting into said electronic component ( 2 ) an electric current that is a function of a control signal (V RESET ), said current being capable of taking a first current value or a second current value (I R ); and
current generator means ( 2 , 30 ) suitable for injecting into said electronic component ( 2 ) an additional electric current (I RZ ) generated in response to said input data signal (E),
said valley current (I V ) having a value that is greater than said first current value and said peak current (I P ) having a value that lies between said second current value (I R ) and the sum of said second current value (I R ) plus the value of said additional current (I RZ ) generated by said generator means ( 2 ).
2. The device ( 1 ) according to claim 1 , characterized in that said electronic component ( 2 , 20 ) is a resonant tunnel effect diode.
3. A processing device ( 1 ) for processing an input optical data signal (E) modulated with a return-to-zero (RZ) type modulation format, the device comprising an electronic component ( 2 ) having a tunnel diode characteristic presenting a peak current (I P ) and a valley current (I V ), said device ( 1 ) being characterized in that it further comprises: a controlled current source ( 3 , 4 , 9 ) suitable for injecting into said electronic component ( 2 ) an electric current that is a function of a control signal (V RESET ), said current being capable of taking a first current value or a second current value (I R ); and
current generator means ( 2 , 30 ) suitable for injecting into said electronic component ( 2 ) an additional electric current (I RZ ) generated in response to said input data signal (E);
said valley current (I V ) having a value that is greater than said first current value and said peak current (I P ) having a value that lies between said second current value (I R ) and the sum of said second current value (I R ) plus the value of said additional current (I RZ ) generated by said generator means ( 2 ),
wherein said electronic component ( 2 ) is a photosensitive resonant tunnel effect diode and constitutes said current generator means.
4. The processing device ( 1 ) according to claim 1 , characterized in that said current source comprises two transistors ( 3 , 4 ) mounted as a differential pair fed by a constant current (I), one of said transistors ( 3 ) being connected in series with said electronic component ( 2 ).
5. A processing device ( 10 ) for processing an input optical data signal (E) modulated with a return-to-zero (RZ) type modulation format, the device comprising an electronic component ( 2 ) having a tunnel diode characteristic presenting a peak current (I P ) and a valley current (I V ), said device ( 1 ) being characterized in that it further comprises:
a controlled current source ( 3 , 4 , 9 ) suitable for injecting into said electronic component ( 2 ) an electric current that is a function of a control signal (V RESET ), said current being capable of taking a first current value or a second current value (I R ); and
current generator means ( 2 , 30 ) suitable for injecting into said electronic component ( 2 ) an additional electric current (I RZ ) generated in response to said input data signal (E);
said valley current (I V ) having a value that is greater than said first current value and said peak current (I P ) having a value that lies between said second current value (I R ) and the sum of said second current value (I R ) plus the value of said additional current (I RZ ) generated by said generator means ( 2 ),
wherein said current source comprises two transistors ( 3 , 4 ) mounted as a differential pair fed by a constant current (I), one of said transistors ( 30 ) being a photosensitive transistor connected in series with said electronic component ( 2 ), said photosensitive transistor ( 30 ) constituting said current generator means.
6. A processing device ( 1 ) for processing an input optical data signal (E) modulated with a return-to-zero (RZ) type modulation format, the device comprising an electronic component ( 2 ) having a tunnel diode characteristic presenting a peak current (I P ) and a valley current (I V ), said device ( 1 ) being characterized in that it further comprises:
a controlled current source ( 3 , 4 , 9 ) suitable for injecting into said electronic component ( 2 ) an electric current that is a function of a control signal (V RESET ), said current being capable of taking a first current value or a second current value (I R ); and
current generator means ( 2 , 30 ) suitable for injecting into said electronic component ( 2 ) an additional electric current (I RZ ) generated in response to said input data signal (E);
said valley current (I V ) having a value that is greater than said first current value and said peak current (I P ) having a value that lies between said second current value (I R ) and the sum of said second current value (I R ) plus the value of said additional current (I RZ ) generated by said generator means ( 2 ),
wherein said modulation format of the input data signal (E) presents a given bit time, and said control signal (V REF ) is made up of voltage pulses of duration shorter than half the bit time.
7. A decision circuit for an input data signal (E) having a modulation format of the return-to-zero (RZ) type presenting a clock rate of given frequency, the circuit being characterized
in that it comprises a processing device comprising an electronic component ( 2 ) for processing an input optical data signal (E) modulated with a return-to-zero (RZ) type modulation format, the device comprising an electronic component ( 2 ) having a tunnel diode characteristic presenting a peak current (I P ) and a valley current (I V ), said device ( 1 ) being characterized in that it further comprises:
a controlled current source ( 3 , 4 , 9 ) suitable for injecting into said electronic component ( 2 ) an electric current that is a function of a control signal (V RESET ), said current being capable of taking a first current value or a second current value (I R ); and
current generator means ( 2 , 30 ) suitable for injecting into said electronic component ( 2 ) an additional electric current (I RZ ) generated in response to said input data signal (E);
said valley current (I V ) having a value that is greater than said first current value and said peak current (I P ) having a value that lies between said second current value (I R ) and the sum of said second current value (I R ) plus the value of said additional current (I RZ ) generated by said generator means ( 2 ), and
in that said control signal (V RESET ) is constituted by a pulse train at said given frequency.
8. An integrated circuit including a device according to claim 1 .
9. An integrated circuit including a device according to claim 4 .
10. An integrated circuit including a device according to claim 5 .
11. An integrated circuit including a device according to claim 6 .
12. The device according to claim 1 , comprising only a single said electronic component.
13. The device according to claim 12 , wherein said single electronic component is a single resonant tunnel effect diode.